Diodes DMN fiche technique

No.	Partie #	Fabricant	Description
1	DMN2027UPS	Diodes	N-Channel MOSFET and Benefits  Low RDS(ON) – Ensures On-State Losses Are Minimized  Small Form Factor Thermally Efficient Package Enables Higher Density End Products  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Devic
2	DMN2004K	Diodes Incorporated	N-CHANNEL ENHANCEMENT MODE MOSFET
3	DMN3190LDW	Diodes	Dual N-Channel MOSFET and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring
4	DMN2024UFU	DIODES	DUAL N-CHANNEL MOSFET and Benefits  Low Gate Threshold Voltage  Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change c
5	DMN2053UFDBQ	DIODES	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET  PCB Footprint of 4mm2  Low On-Resistance  Low Input Capacitance  Low Profile, 0.6mm Maximum Height  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen- and Antimony-Free. “Green” Device (Note 3)  The DMN2053UFDBQ is suitable for
6	DMNH4006SPSQ	Diodes	N-Channel MOSFET and Benefits  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application  Low RDS(ON) – Minimizes Power Losses  Low QG – Minimizes Switching Losses  <1
7	DMN2053UWQ	DIODES	20V N-CHANNEL MOSFET and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2053UWQ is suitable for automotive applications req
8	DMN62D4LDW	DIODES	DUAL N-CHANNEL MOSFET and Benefits  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Ant
9	DMN6068SEQ	DIODES	60V N-CHANNEL ENHANCEMENT MODE MOSFET and Benefits  100% Unclamped Inductive Switch (UIS) Test in Production  Low On-Resistance  Fast Switching Speed  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN6068SEQ is suitable for
10	DMN2056U	Diodes	20V N-Channel MOSFET
11	DMN61D9UW	Diodes	N-CHANNEL MOSFET and Benefits • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up To 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • This
12	DMN62D0UW	Diodes	N-CHANNEL MOSFET and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified
13	DMN601WK	Diodes Incorporated	N-CHANNEL ENHANCEMENT MODE MOSFET and Benefits • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free
14	DMN2004VK	Diodes Incorporated	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Ultra-Small Surface-Mount Package  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and An
15	DMN62D0U	Diodes	N-Channel MOSFET and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Up To 1kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Quali
16	DMN2022UFDF	Diodes	N-Channel MOSFET  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device
17	DMN3010LK3	Diodes	N-Channel MOSFET  Low RDS(ON) – ensures on state losses are minimized  Small form factor thermally efficient package enables higher density end products  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualifie
18	DMNH6012SPS	Diodes	60V N-Channel MOSFET and Benefits BVDSS 60V RDS(ON) Max 11mΩ @ VGS = 10V ID Max TC = +25°C 50A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-eff
19	DMN2024U	DIODES	N-CHANNEL MOSFET and Benefits • Low On-Resistance • Low-Input Capacitance • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSF
20	DMN2053UW	DIODES	20V N-CHANNEL MOSFET and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data  Case: SOT323  Case Material: Molded Plast