Diodes DMG fiche technique

No.	Partie #	Fabricant	Description
1	DMG4435SSS	Diodes	P-Channel MOSFET • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability DMG4435SSS P-CHANNEL ENHANCE
2	DMG2305UX	Diodes	P-Channel MOSFET
3	DMG3415U	Diodes	P-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Up To 3kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q
4	DMG4413LSS	Diodes	30V P-CHANNEL ENHANCEMENT MODE MOSFET and Benefits       Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Descr
5	DMG9N65CT	Diodes	N-Channel MOSFET low onresistance and fast switching, making it ideal for high-efficiency power management applications. Applications  Motor Control  Backlighting  DC-DC Converters  Power Management Functions Features  Low Input Capacitance  High BVDSS Rating
6	DMG3406L	Diodes	N-Channel MOSFET and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications Thi
7	DMG2302UK	Diodes	N-Channel MOSFET and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for H
8	DMG7N65SJ3	Diodes	N-CHANNEL MOSFET and Benefits  Low On-Resistance  High BVDSS Rating for Power Application  Low Input Capacitance  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific
9	DMG3415UFY4Q	Diodes	P-Channel MOSFET
10	DMG1013UWQ	Diodes	P-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) •
11	DMGD7N45SSD	Diodes	Dual N-Channel MOSFET low onresistance and fast switching, making it ideal for high efficiency power management applications. Applications • Motor Control • Backlighting • DC-DC Converters • Power Management Functions Features • Low Input Capacitance • High BVDss Rating
12	DMG4N60SJ3	Diodes	N-Channel MOSFET and Benefits  Low On-Resistance  High BVDSS Rating for Power Application  Low Input Capacitance  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data  Case: TO251 and TO251 (Type TH)
13	DMG2301L	Diodes	P-Channel MOSFET and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change cont
14	DMG2301LK	Diodes	P-Channel MOSFET and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring
15	DMG1012T	Diodes	N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected up to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device
16	DMG3414UQ	Diodes	N-CHANNEL MOSFET BVDSS 20V RDS(ON) Max 25mΩ @ VGS = 4.5V 29mΩ @ VGS = 2.5V 37mΩ @ VGS = 1.8V ID Max TA = +25°C 4.2A 4.0A 3.4A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it
17	DMG4N65CTI	Diodes	N-CHANNEL ENHANCEMENT MODE MOSFET low onresistance and fast switching, making it ideal for high efficiency power management applications. Applications • Motor control • Backlighting • DC-DC Converters • Power management functions Features • Low Input Capacitance • High BVDss rating
18	DMG4N65CT	Diodes	N-CHANNEL ENHANCEMENT MODE MOSFET low onresistance and fast switching, making it ideal for high efficiency power management applications. Applications • Motor control • Backlighting • DC-DC Converters • Power management functions Features • Low Input Capacitance • High BVDss rating
19	DMG9N65CTI	Diodes	N-CHANNEL ENHANCEMENT MODE MOSFET low on-resistance and fast switching, making it ideal for high-efficiency power management applications. Applications  Motor Control  Backlighting  DC-DC Converters  Power Management Functions DMG9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Featur
20	DMG2302U	Diodes	N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Rel