| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Diodes |
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage VGS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) ESD Protec |
|
|
|
|
Diodes |
MOSFET and Benefits Low Input Capacitance Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description This new generation MOSFET is designed to minim |
|
|
|
|
Diodes |
MOSFET • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 |
|
|
|
|
Diodes |
MOSFET and Benefits Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified |
|
|
|
|
Diodes |
MOSFET • Complementary Pair MOSFETs • Low On-Resistance • N-Channel: 35mΩ @ 10V 61mΩ @ 4.5V • P-Channel: 65mΩ @ -10V • 115mΩ @ -4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Fr |
|
|
|
|
Diodes |
MOSFET Device V(BR)DSS Q1 N-Channel 12V Q2 P-Channel -12V RDS(ON) max 29mΩ @ VGS = 4.5V 34mΩ @ VGS = 2.5V 44mΩ @ VGS = 1.8V 65mΩ @ VGS = 1.5V 61mΩ @ VGS = -4.5V 81mΩ @ VGS = -2.5V 115mΩ @ VGS = -1.8V 170mΩ @ VGS = -1.5V ID MAX TA = +25°C 5.6A 5.1A 4 |
|
|
|
|
Diodes |
MOSFET and Benefits • Low On-Resistance • Low Gate Threshold Voltage VGS(th) < 1V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Complementary Pair MOSFET • Ultra-Small Surface Mount Package • ESD Protected Gate to 2.5kV HBM • L |
|
|
|
|
Diodes |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
|
|
|
|
Diodes |
MOSFET ID max TA = +25°C 3.1A 2.7A -2.4A -1.8A Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. |
|
|
|
|
DIODES |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
|
|
|
|
DIODES |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET PCB Footprint of 4mm2 Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Maximum Height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMC2025UF |
|
|
|
|
Diodes |
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR • • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage VGS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) ESD Prot |
|
|
|
|
Diodes |
MOSFET Mechanical Data • Complementary Pair MOSFETs • Low On-Resistance • N-Channel: 36mΩ @ 10V 61mΩ @ 4.5V • P-Channel: 36mΩ @ -10V • 64mΩ @ -4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Le |
|
|
|
|
Diodes |
MOSFET Low On-Resistance N-Channel: 32mΩ @ 10V 46mΩ @ 4.5V P-Channel: 39mΩ @ 10V 53mΩ @ 4.5V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) |
|
|
|
|
Diodes |
MOSFET and Benefits Device V(BR)DSS Q1 12V Q2 -12V RDS(ON) 17mΩ @ VGS = 4.5V 25mΩ @ VGS = 2.5V 32mΩ @ VGS = -4.5V 53mΩ @ VGS = -2.5V ID TA = +25°C 9.5A 7.8A -6.9A -5.4A Description and Applications This new generation Complementary Pair Enhancement Mode |
|
|
|
|
Diodes |
MOSFET and Benefits Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate on N-Channel (>6kV Human Body Model) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. |
|
|
|
|
Diodes |
MOSFET Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Max Height ESD protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Case: U-DFN2020-6 Case |
|
|
|
|
Diodes |
MOSFET and Benefits • Low Input Capacitance • Low On-Resistance • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Desc |
|
|
|
|
Diodes |
MOSFET and Benefits • Low Input Capacitance • Low On-Resistance • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Desc |
|
|
|
|
Diodes |
MOSFET Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description This |
|