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Diodes Incorporated |
N-channel MOSFET · · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A B Dim A B C D E TO-92 Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70 — 0.63 3.68 2.67 1.40 Mechanical Data · · · · Case |
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Diodes |
N-Channel MOSFET and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Small Surface-Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Notes 3) |
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Diodes |
1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER and Benefits Glass Passivated Die Construction Miniature Package Saves Space on PC Boards High Current Capability Ideal for SMT Manufacturing Low Forward Voltage Drop Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony F |
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Diodes |
1.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER and Benefits Glass Passivated Die Construction Miniature Package Saves Space on PC Boards High Current Capability Ideal for SMT Manufacturing Low Forward Voltage Drop Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony F |
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Diodes Incorporated |
N-CHANNEL ENHANCEMENT MODE TRANSISTOR · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets E A TO-92 B Dim A B Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70 — 0.63 3.68 2.67 1.40 Mechanical Data · · · · Case: TO-92 Pl |
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Diodes |
200V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET BVDSS > 200V RDS(ON) ≤ 23Ω @ VGS= 2.6V ID = 120mA Maximum Continuous Drain Current Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific ch |
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