| No. | Partie # | Fabricant | Description | Fiche Technique |
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ETC |
DP904C |
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DP |
Constant current mode LED drive switch |
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DP |
Non-isolated Quasi-Resonant Buck LED Power Switch Integrated with 500V MOSFET No Auxiliary Winding Needed Quasi-Resonant for High Efficiency Built-in Thermal Foldback Built-in Charging Circuit for Fast Start-Up ±4% CC Regulation Very Low VDD Operation Current Built-in AC Line CC Comp |
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Infineon Technologies AG |
Silicon NPN Transistor in. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 45 V, IE = 0 Collector cutoff current |
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Dipac |
Mechanical Seals |
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DP |
Non-Isolated Buck APFC Offline LED Controller Active PFC for High PF and Low THD PF>0.9 with Universal Input Built-in HV Startup and IC Power Supply Circuit Quasi-Resonant for High Efficiency ±1% CC Regulation Very Low VDD Operation Current Excellent Line and Load Regulation LED |
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JILIN SINO |
High Voltage Rectifier Diode Low power loss, high efficiency High reliability RoHS product ORDER MESSAGE - Halogen-Tube DP90C160-GL-B Order codes - - Halogen Free-Tube Halogen-Bag DP90C160-GL-BR N/A - Halogen Free-Bag N/A Marking DP90C160 Package TO-247- |
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Infineon Technologies AG |
NPN Silicon AF Power Transistor racteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BDP951 BDP953 BDP955 Collector-base breakdown voltage IC = 100 µA, IB = 0 BDP951 BDP953 BDP9 |
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Voltage Multipliers |
(DP90x18) Rectifier Diode 9) .020 (0.51) .020 (0.51) .180 (4.57) .040 (1.02) .260 (6.60) .025 (0.64) .118 (3.00) .243(6.17) PAD LAYOUT Dimensions: In. (mm) • All temperatures are ambient unless otherwise noted. • Data subject to change without notice. VOLTAGE MULTIPLIERS |
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Voltage Multipliers |
(DP90x18) Rectifier Diode 9) .020 (0.51) .020 (0.51) .180 (4.57) .040 (1.02) .260 (6.60) .025 (0.64) .118 (3.00) .243(6.17) PAD LAYOUT Dimensions: In. (mm) • All temperatures are ambient unless otherwise noted. • Data subject to change without notice. VOLTAGE MULTIPLIERS |
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TAITRON |
400mW Two Terminals SMD Zener Diodes • Planar Die Construction • 400mW Power Dissipation • Zener Voltage 4.7v to 36v • Suitable for Automated Assembly Processes • RoHS Compliance and Halogen Free SOD-323F Mechanical Data Case: SOD-323F, molded plastic Terminals: Solderable per MIL |
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DP |
Non-Isolated Buck APFC Offline LED Power Switch Active PFC for High PF and Low THD PF>0.9 with Universal Input Built-in HV Startup and IC Power Supply Circuit Internal 650V Power MOSFET Quasi-Resonant for High Efficiency ±1% CC Regulation Very Low VDD Operation Current Excellent Li |
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DP |
Non-isolated step-down LED constant current driver chip |
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Infineon Technologies AG |
NPN Silicon AF Power Transistor racteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BDP951 BDP953 BDP955 Collector-base breakdown voltage IC = 100 µA, IB = 0 BDP951 BDP953 BDP9 |
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Siemens Semiconductor Group |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) cm2 Cu Semiconductor Group Nov-28-1996 BDP 952 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO V 80 100 120 100 20 1 |
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Voltage Multipliers |
(DP90x18) Rectifier Diode 9) .020 (0.51) .020 (0.51) .180 (4.57) .040 (1.02) .260 (6.60) .025 (0.64) .118 (3.00) .243(6.17) PAD LAYOUT Dimensions: In. (mm) • All temperatures are ambient unless otherwise noted. • Data subject to change without notice. VOLTAGE MULTIPLIERS |
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MagnaChip |
N-Channel MOSFET VDS = 600V VDS = 660V ID =9.0A RDS(ON) ≤ 0.75Ω Applications @ VGS = 10V @ VGS = 10V Power Supply PFC High Current, High Speed Switching Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Sou |
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DP |
Non-Isolated Buck APFC Offline LED Power Switch Active PFC for High PF and Low THD PF>0.9 with Universal Input Built-in HV Startup and IC Power Supply Circuit Internal 550V Power MOSFET Quasi-Resonant for High Efficiency ±1% CC Regulation Very Low VDD Operation Current Excellent Li |
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DP |
Non-isolated Quasi-Resonant Buck LED Power Switch GENERAL DESCRIPTION Integrated with 500V MOSFET No Auxiliary Winding Needed Quasi-Resonant for High Efficiency Built-in Thermal Foldback Built-in Charging Circuit for Fast Start-Up ±4% CC Regulation Very Low VDD Operation Current Bu |
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DP |
Non-isolated Quasi-Resonant Buck LED Power Switch Integrated with 500V MOSFET No Auxiliary Winding Needed Quasi-Resonant for High Efficiency Built-in Thermal Foldback Built-in Charging Circuit for Fast Start-Up ±4% CC Regulation Very Low VDD Operation Current Built-in AC Line CC Comp |
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