DIODES SB3 fiche technique

No.	Partie #	Fabricant	Description
1	SB3150	Kexin	Schottky Diodes ● Metal-Semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 DO-27 (DO-201AD) 0.210 (5.3) 0.190 (4.8) DIA. 1.0 (25.4) MIN. 0.375 (9
2	SB360	Diodes	3.0A SCHOTTKY BARRIER RECTIFIER  Guard Ring Die Construction for Transient Protection  Low Power Loss, High Efficiency  High Surge Capability  High Current Capability and Low Forward Voltage Drop  Surge Overload Rating to 80A Peak  For Use in Low Voltage, High Frequency Inver
3	SB315SVF	EIC discrete Semiconductors	(SB315SVF / SB330SVF) SCHOTTKY BARRIER RECTIFIER DIODES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop Pb / RoHS Free SCHOTTKY BARRIER RECTIFIER DIODES DO-201AD 0.21 (5.33) 0.19 (4.82) 1.00 (25.4) MIN. 0.37
4	SB380	DIODES	3.0A SCHOTTKY BARRIER RECTIFIER  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  Low-Power Loss, High Efficiency  High-Surge Capability  High-Current Capability and Low-Forward Voltage Drop  Surge Overload Rating to 80A Peak  For Use in Low Volta
5	MSB30JL	DIODES	3.0A SURFACE-MOUNT STANDARD RECOVERY BRIDGE RECTIFIER and Benefits  Glass Passivated Die Construction  Compact, Thin Profile Package Design  Low Forward Voltage Drop  Reliable Robust Construction  Ideal for SMT Manufacturing  Rated at 600V PRV  UL Recognized File #E364304  Lead-Free Finish; RoHS
6	MSB30KH	Diodes	3.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER and Benefits  Glass Passivated Die Construction  Compact, Thin Profile Package Design  Reliable Robust Construction  Ideal for SMT Manufacturing  Rated at 1000V PRV  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “G
7	SB340	Diodes	3.0A SCHOTTKY BARRIER RECTIFIER  Guard Ring Die Construction for Transient Protection  Low Power Loss, High Efficiency  High Surge Capability  High Current Capability and Low Forward Voltage Drop  Surge Overload Rating to 80A Peak  For Use in Low Voltage, High Frequency Inver
8	SB350	Diodes	3.0A SCHOTTKY BARRIER RECTIFIER  Guard Ring Die Construction for Transient Protection  Low Power Loss, High Efficiency  High Surge Capability  High Current Capability and Low Forward Voltage Drop  Surge Overload Rating to 80A Peak  For Use in Low Voltage, High Frequency Inver
9	SB390	Semikron	Schottky barrier rectifiers diodes !"#$ Mechanical Data %&$' ( ) ' ) * + ,$-*%$./ ) 0 - 1) ) '.
10	SB360	Kexin	Schottky Diodes ● Metal-Semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 DO-27 (DO-201AD) 0.210 (5.3) 0.190 (4.8) DIA. 1.0 (25.4) MIN. 0.375 (9
11	MSB30M	Diodes	3.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER and Benefits  Glass Passivated Die Construction  Compact, Thin Profile Package Design  Reliable Robust Construction  Ideal for SMT Manufacturing  Rated at 1000V PRV  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “G
12	PI3DPX1207B	Diodes	DP-Alt DP1.4/USB3.1 10Gbps Linear Redriver
13	SB330SVF	EIC discrete Semiconductors	(SB315SVF / SB330SVF) SCHOTTKY BARRIER RECTIFIER DIODES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop Pb / RoHS Free SCHOTTKY BARRIER RECTIFIER DIODES DO-201AD 0.21 (5.33) 0.19 (4.82) 1.00 (25.4) MIN. 0.37
14	SB320	Diodes	3.0A SCHOTTKY BARRIER RECTIFIER  Guard Ring Die Construction for Transient Protection  Low Power Loss, High Efficiency  High Surge Capability  High Current Capability and Low Forward Voltage Drop  Surge Overload Rating to 80A Peak  For Use in Low Voltage, High Frequency Inver
15	SB330	Diodes	3.0A SCHOTTKY BARRIER RECTIFIER  Guard Ring Die Construction for Transient Protection  Low Power Loss, High Efficiency  High Surge Capability  High Current Capability and Low Forward Voltage Drop  Surge Overload Rating to 80A Peak  For Use in Low Voltage, High Frequency Inver
16	SB320	Semikron	Schottky barrier rectifiers diodes !"#$ Mechanical Data %&$' ( ) ' ) * + ,$-*%$./ ) 0 - 1) ) '.
17	SB3100	Semikron	Schottky barrier rectifiers diodes !"#$ Mechanical Data %&$' ( ) ' ) * + ,$-*%$./ ) 0 - 1) ) '.
18	SB350	Kexin	Schottky Diodes ● Metal-Semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 DO-27 (DO-201AD) 0.210 (5.3) 0.190 (4.8) DIA. 1.0 (25.4) MIN. 0.375 (9
19	SB3200	Kexin	Schottky Diodes ● Metal-Semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 DO-27 (DO-201AD) 0.210 (5.3) 0.190 (4.8) DIA. 1.0 (25.4) MIN. 0.375 (9
20	SB3100	DIODES	3.0A SCHOTTKY BARRIER RECTIFIER  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  Low-Power Loss, High Efficiency  High-Surge Capability  High-Current Capability and Low-Forward Voltage Drop  Surge Overload Rating to 80A Peak  For Use in Low Volta