| No. | Partie # | Fabricant | Description | Fiche Technique |
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Windforce |
Low capacitance bidirectional TVS Diodes Peak Power Dissipation − 300 W (8 x 20 us Waveform) Replacement for MLV (0805) Protects One Power or I/O Port Low Clamping Voltage Low Leakage Response Time is < 1 ns Available in Multiple Voltages Ranging From 3V to36V Meets MSL 1 R |
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Vishay |
Zener Diodes • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Voltage regulators and transient suppression • Circu |
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SeCoS |
Plasetic Encapsulate ESD Protection Diodes TA = 25°C ) RATING SYMBOL VALUE UNIT IEC 61000-4-2 (ESD) Air Contact ±15 KV ±8.0 ESD voltage per human body model 30 KV Total power dissipation on FR-5 Board (Note 1) PD 200 mW Thermal Resistance Junction−to−Ambient RθJA 625 °C / W Ju |
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DIODES |
NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR • Epitaxial Planar Die Construction • Complementary PNP Types Available (DDTB) • Built-In Biasing Resistors • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications re |
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NEC |
ZENER DIODES • Low Noise • Sharp Breakdown characteristic. • Vz: Applied E24 standard. PACKAGE DIMENSIONS (in millimeters) 2.5±0.15 1.7±0.1 Cathode Indication APPLICATIONS Circuits for Constant Voltage, Constant Current, Waveform Clipper, Surge absorber, etc. |
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Diodes |
1 CHANNEL UNIDIRECTIONAL TVS 350 Watts Peak Pulse Power (tp = 8x20μs) IEC 61000-4-2 (ESD): Air – 30kV, Contact – 30kV IEC 61000-4-2 (ESD), HBM – 16kV IEC 61000-4-4, 40A IEC 61000-4-5 (Lightning), 15A Typically Used at Computer Interface Protection, Data Line and Powe |
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ETC |
Power Rectifier Diodes Durchlaßspannung Schleusenspannung Ersatzwiderstand Sperrstrom Durchbruchspannung Characteristic values on-state voltage threshold voltage slope resistance reverse current breakdown voltage tvj = t vj max , iF = 600 A tvj = t vj max tvj = t vj max t |
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WeEn |
ESD Protection Diodes Array and benefits • Peak pulse power 350W @ 8/20us waveform • IEC 61000-4-2 (ESD) ±30kV(air), ±30kV(contact) • Protect one bidirectional line or two unidirectional lines • Low clamping voltage • Low leakage current • Meet MSL level1 • Halogen free and RoH |
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DIODES |
NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR • Epitaxial Planar Die Construction • Complementary PNP Types Available (DDTB) • Built-In Biasing Resistors • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications re |
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DIODES |
NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR • Epitaxial Planar Die Construction • Complementary PNP Types Available (DDTB) • Built-In Biasing Resistors • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications re |
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DIODES |
NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR • Epitaxial Planar Die Construction • Complementary PNP Types Available (DDTB) • Built-In Biasing Resistors • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications re |
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Vishay |
Zener Diodes • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Voltage regulators and transient suppression • Circu |
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Diodes |
LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Low Profile Package (0.53mm Max) and Ultra-Small PCB Footprint Area (1.08mm * 0.68mm Max) Suitable for Compact Portable Electronics Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV 1 Channel of ESD Protection Low C |
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Vishay |
Zener Diodes • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Medium power voltage regulators and medium power tra |
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SEMTECH |
ZENER DIODES • Sharp Breakdown Characteristics • Vz: Applied E24 standard LS-31 Applications • Circuits for Constant Voltage, Constant Current Wave form clipper, Surge absorber, etc. Absolute Maximum Ratings (Ta = 25oC) Power Dissipation Forward Current Revers |
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EIC |
SILICON ZENER DIODES : * Complete 4.7 to 39 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free MECHANICAL DATA Case: DO-34 Glass Case Weight: approx. 0.093g TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SILICON ZENE |
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NEC |
ZENER DIODES 1 W DO-41 GLASS SEALED PACKAGE • DHD (Double Heatsink Diode) Construction • Planar process • VZ: Applied E24 standard • DO-41 Glass sealed package φ 3.0 MAX. Circuits for, Constant Voltage, Constant Current, Wave form clipper, Surge absorber, etc. MAXIMUM RATINGS (TA = 25°C) Pow |
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NEC |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE • Based on the electrostatic discharge immunity test (IEC1000-42), the product assures the minimum endurance of 30 kV. • Based on the reference supply of the set, the product achieves a series over a wide range (15 product name lined up). 0.9 ± 0.1 0 |
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Diodes |
4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY • IEC 61000-4-2 (ESD): Air ±15kV, Contact ±8kV • 4 Channels of ESD Protection • Low Channel Input Capacitance of 0.85pF Typical • Typically Used at High Speed Ports such as USB 2.0, IEEE1394, Serial ATA, DVI, HDMI, PCI • Totally Lead-Free & Fully RoH |
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Kexin |
Switching Diodes ● High Conductance Ultra Fast Diode SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 +0.22.8 -0.1 CONNECTION DIAGRAMS 1201 3 3 1203 1 1204 2 NC 3 12 3 1205 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Diodes Unit: mm 0.15 +0. |
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