| No. | Partie # | Fabricant | Description | Fiche Technique |
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ON Semiconductor |
Schottky Diodes only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VRRM IF(AV) IFSM Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-Repetitive Peak Forward Surge Current Pulse Width = 1.0 second 30 V 20 |
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nexperia |
Schottky barrier diodes and benefits • Low forward voltage • Low capacitance 3. Applications • Ultra high-speed switching • Line termination • Voltage clamping • Reverse polarity protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter VR rev |
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Fairchild Semiconductor |
Schottky Diodes |
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General Semiconductor |
Schottky Diodes SOD-123 .022 (0.55) ♦ For general purpose applications ♦ These diodes feature very low turnon voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. case with |
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NXP |
Schottky barrier diodes and benefits Low forward voltage Low capacitance AEC-Q101 qualified 1.3 Applications Ultra high-speed switching Line termination Voltage clamping Reverse polarity protection 1.4 Quick reference data Table 1. Quick reference data Tam |
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STMicroelectronics |
Small signal Schottky diodes Low conduction and reverse losses Negligible switching losses Low forward and reverse recovery times Extremely fast switching Surface mount device Low capacitance diode ECOPACK®2 compliant component Description The BAT54 series uses 40 |
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General Semiconductor |
Schottky Diodes ♦ These diodes feature very low turn-on Top View .056 (1.43) .052 (1.33) voltage and fast switching. ♦ These devices are protected by a PN 1 2 max. .004 (0.1) junction guard ring against excessive voltage, such as electrostatic discharges. .007 |
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AiT Semiconductor |
DUAL BARRIER SCHOTTKY DIODES ⚫ Extremely Fast Switching Speed ⚫ Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10mAdc ORDERING INFORMATION Package Type Part Number SOT-323 BAT54AW Note 3,000pcs/Reel AiT provides all RoHS Compliant Products PIN DESCRIPTION REV1.0 - DEC 2 |
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Vishay Siliconix |
(BAT42W-V / BAT43W-V) Small Signal Schottky Diodes • These diodes feature very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • These diodes are also available in the DO-35 case with the type |
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UTC |
SCHOTTKY BARRIER (DUAL) DIODES * Low forward voltage * Guard ring protected * Small plastic SMD package SYMBOL DIODE ORDERING INFORMATION Ordering Number Halogen Free BAT54CWG-AL3-R Note: Pin Assignment: A: Anode K: Cathode BAT54CWG-AL3-R (1)Packing Type (2)Package Type (3 |
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UTC |
SCHOTTKY BARRIER (DUAL) DIODES * Low forward voltage * Guard ring protected * Small plastic SMD package SYMBOL DIODE ORDERING INFORMATION Ordering Number BAT54SWG-AL3-R Note: Pin Assignment: A: Anode K: Cathode BAT54SWG-AL3-R (1)Packing Type (2)Package Type (3)Green Pack |
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ON Semiconductor |
Schottky Barrier Diodes • Extremely Fast Switching Speed • Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fr |
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NXP |
Schottky barrier diodes and benefits • Low forward voltage • Low capacitance 3. Applications • Ultra high-speed switching • Line termination • Voltage clamping • Reverse polarity protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per dio |
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ON Semiconductor |
Schottky Barrier Diodes • Extremely Fast Switching Speed • Extremely Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devic |
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Vishay |
Small Signal Schottky Diodes • These diodes feature very low turn-on voltage and fast switching Available • These devices are protected by a PN junction guardring against excessive voltage, such as electrostatic discharges • AEC-Q101 qualified available • Molding compound m |
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NXP |
Schottky barrier diodes and benefits Low forward voltage Low capacitance AEC-Q101 qualified 1.3 Applications Ultra high-speed switching Line termination Voltage clamping Reverse polarity protection 1.4 Quick reference data Table 1. Quick reference data Tam |
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Fairchild Semiconductor |
Schottky Diodes |
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ON Semiconductor |
Dual Series Schottky Barrier Diodes • Extremely Fast Switching Speed • Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fr |
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NXP |
Schottky barrier double diodes • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power supplies • Rectification • Polarity protection. DESCRIPTION Plana |
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NXP |
Schottky barrier double diodes • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power supplies • Rectification • Polarity protection. DESCRIPTION Plana |
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