| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Diodes |
SCHOTTKY BARRIER RECTIFIER and Benefits Guard Ring Die Construction for Transient Protection Ideally Suited for Automated Assembly Low Power Loss, High Efficiency Surge Overload Rating to 50A Peak For Use in Low-Voltage, High-Frequency Inverters Lead-Free Finish; R |
|
|
|
|
Diodes Incorporated |
2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER • Guard Ring Die Construction for Transient Protection • Ideally Suited for Automated Assembly • Low Power Loss, High Efficiency • Surge Overload Rating to 50A Peak • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Prote |
|
|
|
|
Diodes |
SCHOTTKY BARRIER RECTIFIER and Benefits Guard Ring Die Construction for Transient Protection Ideally Suited for Automated Assembly Low Power Loss, High Efficiency Surge Overload Rating to 50A Peak For Use in Low-Voltage, High-Frequency Inverters Lead-Free Finish; R |
|
|
|
|
Diodes Incorporated |
2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER • Guard Ring Die Construction for Transient Protection • Ideally Suited for Automated Assembly • Low Power Loss, High Efficiency • Surge Overload Rating to 50A Peak • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Prote |
|
|
|
|
SSDI |
ZENER DIODES Hermetically Sealed in Glass Axial Lead Rated at 500 mW Surface Mount Rated at 800 mW Available in Axial (L), Round Tab Surface Mount (SM) and Square Tab Surface Mount (SMS) Versions Available to TX, TXV, and Space Levels 5/ www.DataSheet4 |
|
|
|
|
Skyworks |
Silicon Schottky Barrier Diodes Available in both P-type and N-type low barrier designs Low 1/f noise Packages rated MSL1, 260 C per JEDEC J-STD-020 Description Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They a |
|
|
|
|
DIODES |
2.0A SCHOTTKY BARRIER RECTIFIER and Benefits Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation Lead-Free Finish; RoHS Comp |
|
|
|
|
DIODES |
2.0A SCHOTTKY BARRIER RECTIFIER and Benefits Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation Lead-Free Finish; RoHS Comp |
|
|
|
|
DIODES |
2.0A SCHOTTKY BARRIER RECTIFIER and Benefits Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation Reduced High-Temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation Lead-Free Finish; RoHS Comp |
|
|
|
|
Littelfuse |
TVS Diodes ■ High reliability application and automotive grade AEC Q101 qualified ■ Surface mount component to optimize board space ■ Low profile package ■ Fast response time: typically less than 1.0ns from 0V to VBR min ■ Excellent clamping capability ■ Low |
|
|
|
|
JGD |
Surface Mount Transient Voltage Suppressors Diodes P6SMB6.8A THRU P6SMB550A Surface Mount Transient Voltage Suppressors Diodes * For surface mounted application * Low profile package * Buit-in strain relief * Glass passivated junction * Excellent clamping capability * Fast response time: typically |
|
|
|
|
Diodes |
Dual DiSEqC Interface • Dual Channel DiSEqC™ interface • Reliable and accurate detectors • High channel isolation • Compatible with Eutelsat and US specifications • Simple and easy to design in. • Outputs compatible with LSTTL and CMOS loads • Operates over a wide supply |
|
|
|
|
Diodes Incorporated |
HIGH CURRENT SILICON BRIDGE RECTIFIER · · · · · · NOT RECOMMENDED FOR NEW DESIGNS, USE GBPC15/W, GBPC25/W, OR GBPC35/W MB-35 H B E L A B M High Conductivity Metal Case Superior Thermal Design Surge Ratings to 400A Terminals Solderable per MIL-STD-202, Method 208 Universal Terminals; Sn |
|
|
|
|
Littelfuse |
TVS Diodes ■ High reliability application and automotive grade AEC Q101 qualified ■ Surface mount component to optimize board space ■ Low profile package ■ Fast response time: typically less than 1.0ns from 0V to VBR min ■ Excellent clamping capability ■ Low |
|
|
|
|
Sunmate |
SURFACE MOUNT SILICON ZENER DIODES ! Complete voltage range 6.8 to 390 volts ! High peak reverse power dissipation ! High reliability ! Low leakage current ! Standard zener voltage tolerance is ± 5 %. Mechanical Data ! Case : SMA (DO-214AC) Molded plastic ! Epoxy : UL94V-O rate flame |
|
|
|
|
JGD |
Surface Mount Transient Voltage Suppressors Diodes P6SMB6.8A THRU P6SMB550A Surface Mount Transient Voltage Suppressors Diodes * For surface mounted application * Low profile package * Buit-in strain relief * Glass passivated junction * Excellent clamping capability * Fast response time: typically |
|
|
|
|
JGD |
Surface Mount Transient Voltage Suppressors Diodes P6SMB6.8A THRU P6SMB550A Surface Mount Transient Voltage Suppressors Diodes * For surface mounted application * Low profile package * Buit-in strain relief * Glass passivated junction * Excellent clamping capability * Fast response time: typically |
|
|
|
|
Diodes Incorporated |
HIGH CURRENT SILICON BRIDGE RECTIFIER · · · · · · NOT RECOMMENDED FOR NEW DESIGNS, USE GBPC15/W, GBPC25/W, OR GBPC35/W MB-35 H B E L A B M High Conductivity Metal Case Superior Thermal Design Surge Ratings to 400A Terminals Solderable per MIL-STD-202, Method 208 Universal Terminals; Sn |
|
|
|
|
Littelfuse |
TVS Diodes • 600W peak pulse power capability at 10/1000μs waveform, repetition rate (duty cycles):0.01% • Excellent clamping capability • Low incremental surge resistance • Typical IR less than 1μA when VBR min>12V • Optimized surface mount footprint for min |
|
|
|
|
Littelfuse |
TVS Diodes • Excellent clamping capability • Low incremental surge resistance • aTybpoivceal1I2RVless than 1µA • For surface mounted applications to optimize board space • Low profile package • T ypical failure mode is short from over-specified voltage or |
|