| No. | Partie # | Fabricant | Description | Fiche Technique |
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Cystech Electonics Corp |
PNP Transistor °C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) 1 *VBE(sat) 2 hFE 1 hFE 2 hFE 3 hFE 4 fT Cob Min. -160 -150 -5 100 100 50 120 100 Typ. Max. -50 -50 -0.2 -0.5 -1 -1 390 6 Unit V V V nA nA V V V V MHz pF www.DataSheet4U.com Sp |
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Cystech Electonics Corp |
PNP Transistor 2 hFE 3 hFE 4 fT Cob Min. -160 -150 -5 50 60 50 120 100 Typ. Max. -50 -50 -0.2 -0.5 -1 -1 390 6 Unit V V V nA nA V V V V MHz pF www.DataSheet4U.com Spec. No. : C307N3 Issued Date : 2003.06.27 Revised Date : 2006.08.04 Page No. : 2/5 Test Conditions |
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Cystech Electonics Corp |
PNP Transistor C307S3 Issued Date : 2003.06.27 Revised Date : Page No. : 2/4 Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-100V VEB=-4V IC=-10mA, IB=-1mA VCE=-6V, IC=-2mA VCE=-12V, IC=-2mA, f=30MHz VCB=-12V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% |
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Cystech Electonics Corp |
PNP Transistor C306S3 Issued Date : 2002.05.11 Revised Date : 2002.11.26 Page No. : 2/4 Test Conditions IC=-50uA IC=-1mA IE=-50uA VCB=-60V VEB=-6V IC=-50mA, IB=-5mA VCE=-6V, IC=-1mA VCE=-12V, IC=-2mA, f=30MHz VCB=-12V, f=1MHz *Pulse Test: Pulse Width ≤380us, Dut |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA • Pb-free package Symbol BTA1664M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Vol |
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Cystech Electonics Corp |
PNP Transistor • Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.1A • Excellent current gain linearity • Pb-free package Symbol BTA1640FP Outline TO-220FP B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Para |
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Cystech Electonics Corp |
PNP Transistor Revised Date : 2005.06.01 Page No. : 2/5 Test Conditions IC=-100µA IC=-1mA IE=-100µA VCB=-200V VEB=-3V IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA VCE=-10V, IC=-30mA VCE=-20V, IC=-10mA, f=100MHz VCB=-20V, f=1MHz *Pulse T |
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Cystech Electonics Corp |
PNP Transistor • High Breakdown Voltage:BVCEO≥-350V • Complementary to BTC4062N3 Symbol BTA1722N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cur |
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Cystech Electonics Corp |
PNP Transistor • High breakdown voltage, BVCEO=-400V • Low saturation voltage • High switching speed. • Complementary to BTD2568L3 • Pb-free package Symbol BTA1727L3 Outline SOT-223 C E B：Base C：Collector E：Emitter C B Absolute Maximum Ratings (Ta=25°C) Param |
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Cystech Electonics Corp |
PNP Transistor A V V MHz pF www.DataSheet4U.com Spec. No. : C309A3-R Issued Date : 2003.10.15 Revised Date : 2004.04.02 Page No. : 2/4 Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-400V VCE=-300V, REB=4kΩ VEB=-6V IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA VCE=-10V, IC |
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Cystech Electonics Corp |
PNP Transistor Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO ICES VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) hFE 1 *hFE 2 *hFE 3 *hFE 4 Cob Min. -400 -400 -6 50 56 50 40 Typ. Max. -10 -10 -10 -0.2 -0.3 -0.6 |
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Cystech Electonics Corp |
PNP Transistor F www.DataSheet4U.com Spec. No. : C309N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 2/4 Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-400V VCE=-300V, REB=4kΩ VEB=-6V IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA VCE=-10V, IC=-10mA VCE=-1 |
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Cystech Electonics Corp |
PNP Transistor µA µA V MHz pF www.DataSheet4U.com Spec. No. : C306C3 Issued Date : 2004.03.03 Revised Date : Page No. : 2/4 Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-60V VEB=-6V IC=-50mA, IB=-5mA VCE=-6V, IC=-1mA VCE=-12V, IC=-2mA, f=30MHz VCB=-12V, IE=0, f |
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Cystech Electonics Corp |
PNP Transistor BVCEO IC RCESAT -100V -5A 150mΩ • Low VCE(sat), VCE(sat)=-0.45 V (typical), at IC / IB = -3A / -0.15A • Excellent DC current gain characteristics • Wide SOA • Complementary to BTC5103I3 • RoHS compliant package Symbol BTA1952I3 Outline TO-251 B |
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Cystech Electonics Corp |
PNP Transistor • The BTA608A3 is designed for use in driver stage of AF amplifier and general purpose amplification. • High HFE and excellent linearity • Large current capability and wide SOA • Complementary to BTC536A3 • Pb-free package Symbol BTA608A3 Outline T |
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Cystech Electonics Corp |
PNP Transistor • Large current capability • Low collector-to-emitter saturation voltage • High speed switching • Ultra small package facilitates miniaturization in end products • High allowable power dissipation • Pb-free package Symbol BTA1542N3 Outline SOT-23 |
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Cystech Electonics Corp |
PNP Transistor -8.9 -0.03 0 -0.25 212 200 7 Max. -1.0 -1.0 -0.5 390 Unit V V V uA uA V MHz pF www.DataSheet4U.com Spec. No. : C305S3 Issued Date : 2002.06.11 Revised Date : 2002.11.01 Page No. : 2/4 Test Conditions IC=-10uA IC=-1mA IE=-100uA VCB=-20V VEB=-4V IC= |
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Cystech Electonics Corp |
PNP Transistor BVCEO IC RCESAT -50V -7A 70mΩ • Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.15A • Excellent current gain linearity • RoHS compliant package Symbol BTA1640I3 Outline TO-251 B：Base C：Collector E：Emitter B CE |
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Cystech Electonics Corp |
PNP Transistor BVCEO IC RCESAT -50V -7A 70mΩ • Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.15A • Excellent current gain linearity • RoHS compliant package Symbol BTA1640J3 Outline TO-252 B：Base C：Collector E：Emitter B C |
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Cystech Electonics Corp |
PNP Transistor • Low VCE(sat), VCE(sat)=-0.5 V (typical), at IC / IB = -3A / -0.15A • Excellent DC current gain characteristics • Wide SOA Symbol BTA1952E3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector |
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