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Silicon Carbide Power MOSFET Package VDS ID(MAX) = 1200 V = 24 A N-Channel Enhancement Mode RDS(on) = 160mΩ • • • • • • High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche |
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Silicon Carbide Power MOSFET Package VDS ID(MAX) R 1200 V 42 A 80mΩ DS(on) N-Channel Enhancement Mode • • • • • • High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedn |
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