| No. | Partie # | Fabricant | Description | Fiche Technique |
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Comset Semiconductors |
High Speed Power Transistor g Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter saturation Voltage Base-Emitter saturation Voltage DC Current Gain Test Condition(s) IC= 100 mA , IB= 0 A L= 25 mH VCE= VCEMax VBE= 0 V VCE= VCEMax, VBE= 0 V Tcase = 125°C V |
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Comset Semiconductors |
High Speed Power Transistor g Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter saturation Voltage Base-Emitter saturation Voltage DC Current Gain Test Condition(s) IC= 100 mA , IB= 0 A L= 25 mH VCE= VCEMax VBE= 0 V VCE= VCEMax, VBE= 0 V Tcase = 125°C V |
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Comset Semiconductors |
High Current Switching Transistors ng Voltage (*) Emitter-Base Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter saturation Voltage (*) Base-Emitter saturation Voltage (*) Transition frenquency Test Condition(s) IC= 200 mA, IB= 0 A L= 25 mH IC= 0 A , IE= 50 mA |
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