| No. | Partie # | Fabricant | Description | Fiche Technique |
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Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR E 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 8 5 80 3 5 1 -40 to +110 -40 to +125 230 29/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS TIC116A, TIC116B, TIC116C, TIC116D, TI |
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Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR °C °C °C 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 5 3.2 30 0.2 1.3 0.3 -40 to +110 -40 to +125 230 29/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS TIC106A, TIC106B, TIC106 |
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Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR °C °C °C 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 5 3.2 30 0.2 1.3 0.3 -40 to +110 -40 to +125 230 29/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS TIC106A, TIC106B, TIC106 |
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Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR °C °C °C 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 5 3.2 30 0.2 1.3 0.3 -40 to +110 -40 to +125 230 29/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS TIC106A, TIC106B, TIC106 |
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Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR °C °C °C 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 5 3.2 30 0.2 1.3 0.3 -40 to +110 -40 to +125 230 29/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS TIC106A, TIC106B, TIC106 |
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Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR °C °C °C 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 5 3.2 30 0.2 1.3 0.3 -40 to +110 -40 to +125 230 29/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS TIC106A, TIC106B, TIC106 |
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Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR E 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 8 5 80 3 5 1 -40 to +110 -40 to +125 230 29/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS TIC116A, TIC116B, TIC116C, TIC116D, TI |
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Comset Semiconductor |
SILICON BIDIRECTIONAL TRIODE THYRISTOR temperature (pulse width ≤200 2.2 PGM µs) Average gate power dissipation at (or 0.9 PG(AV) below) 85°C case (see Note5) www.DataSheet4U.com Operating case temperature range -40 to +110 TC Storage temperature range -40 to +125 Tstg Lead temperature 1 |
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Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR C D E 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 12 7.5 100 3 5 1 -40 to +110 -40 to +125 230 30/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - SEMICONDUCTORS TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M, T |
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Comset Semiconductors |
(TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR se temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds Value B D M S N Unit 100 200 400 600 700 800 4 25 30 ± 0.2 1.3 0.3 -40 to +110 -40 to +125 230 V A A A A W W °C °C °C 30/10/2012 COMSET SEMICONDUCTO |
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Comset Semiconductor |
SILICON BIDIRECTIONAL TRIODE THYRISTOR temperature (pulse width ≤200 2.2 PGM µs) Average gate power dissipation at (or 0.9 PG(AV) below) 85°C case (see Note5) www.DataSheet4U.com Operating case temperature range -40 to +110 TC Storage temperature range -40 to +125 Tstg Lead temperature 1 |
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Comset Semiconductor |
SILICON BIDIRECTIONAL TRIODE THYRISTOR temperature (pulse width ≤200 2.2 PGM µs) Average gate power dissipation at (or 0.9 PG(AV) below) 85°C case (see Note5) www.DataSheet4U.com Operating case temperature range -40 to +110 TC Storage temperature range -40 to +125 Tstg Lead temperature 1 |
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Comset Semiconductor |
SILICON BIDIRECTIONAL TRIODE THYRISTOR temperature (pulse width ≤200 2.2 PGM µs) Average gate power dissipation at (or 0.9 PG(AV) below) 85°C case (see Note5) www.DataSheet4U.com Operating case temperature range -40 to +110 TC Storage temperature range -40 to +125 Tstg Lead temperature 1 |
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Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR °C °C °C 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 5 3.2 30 0.2 1.3 0.3 -40 to +110 -40 to +125 230 29/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS TIC106A, TIC106B, TIC106 |
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Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR °C °C °C 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 5 3.2 30 0.2 1.3 0.3 -40 to +110 -40 to +125 230 29/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS TIC106A, TIC106B, TIC106 |
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Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR E 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 8 5 80 3 5 1 -40 to +110 -40 to +125 230 29/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS TIC116A, TIC116B, TIC116C, TIC116D, TI |
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Comset Semiconductors |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR C D E 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 12 7.5 100 3 5 1 -40 to +110 -40 to +125 230 30/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - SEMICONDUCTORS TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M, T |
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Comset Semiconductors |
(TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR case (see Note5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds Value B C D E M S N Unit 100 200 300 400 500 600 700 800 8 70 8 ±1 2.2 0.9 -40 to +110 -40 to +125 230 V A A A A W W °C |
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Comset Semiconductors |
(TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR case (see Note5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds Value B C D E M S N Unit 100 200 300 400 500 600 700 800 8 70 8 ±1 2.2 0.9 -40 to +110 -40 to +125 230 V A A A A W W °C |
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Comset Semiconductors |
(TIC236x) SILICON TRIACS w.DataSheet4U.net/ SEMICONDUCTORS TIC236A, TIC236B, TIC236C, TIC236D, TIC236E, TIC236M, TIC236N, TIC236S ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol IDRM Ratings Repetitive peak off-state current Gate trigger current Test Co |
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