Comset Semiconductor BD2 fiche technique

No.	Partie #	Fabricant	Description
1	BD246A	Comset Semiconductors	PNP SILICON POWER TRANSISTORS , A, B, C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICES Ratings Collector- Emitter Cut-off Current VCE VCE VCE VCE Test Condition(s) Min - Typ - Mx -0.4 Unit mA = -55 V , VBE = 0 = -70 V , VBE = 0 = -90 V , VBE = 0 = -
2	BD242	Comset Semiconductor	PNP transistors
3	BD244C	Comset Semiconductors	Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings VCE VCE VCE VCE Test Condition(s) Min Typ Max Unit ICES Collector- Emitter Cutoff Current = -45 V , VBE = 0 = -60 V , VBE = 0 = -80 V , VBE = 0 = -100 V , VBE = 0 IC
4	BD246C	Comset Semiconductors	PNP SILICON POWER TRANSISTORS , A, B, C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICES Ratings Collector- Emitter Cut-off Current VCE VCE VCE VCE Test Condition(s) Min - Typ - Mx -0.4 Unit mA = -55 V , VBE = 0 = -70 V , VBE = 0 = -90 V , VBE = 0 = -
5	BD242B	Comset Semiconductor	PNP transistors
6	BD242C	Comset Semiconductor	PNP transistors
7	BD241A	Comset Semiconductor	NPN transistors
8	BD241B	Comset Semiconductor	NPN transistors
9	BD241C	Comset Semiconductor	NPN transistors
10	BD201	Comset Semiconductors	SILCON EPITAXIAL-BASE POWER TRANSISTORS ataSheet4U.co.kr/ NPN BD201 – BD203 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICEO ICBO IEBO VCBO VCEO VEBO Ratings Collector Cutoff Current Test Condition(s) VCE=30 V, IB=0V Min 60 45 60 5 30 30 25 7 1.5 2.5 - Typ - Max
11	BD202	Comset Semiconductors	SILCON EPITAXIAL-BASE POWER TRANSITORS ://www.DataSheet4U.co.kr/ PNP BD202 – BD204 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol -ICEO -ICBO -IEBO -VCBO -VCEO -VEBO Ratings Collector Cutoff Current Test Condition(s) -VCE=30 V, IB=0V Min 60 45 60 5 30 30 25 7 1.5 2.
12	BD239	Comset Semiconductors	Medium Power Linear/Switching /10/2012 COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BD239 – A – B – C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCE=30 V VCE=30 V VCE=60 V VCE=60 V Min 45 60 80
13	BD240	Comset Semiconductors	Medium Power Linear/Switching °C/W °C/W 22/10/2012 COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP BD240 – A – B – C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCE=-30 V VCE=-30 V VCE=-60 V VCE=-6
14	BD244	Comset Semiconductors	Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings VCE VCE VCE VCE Test Condition(s) Min Typ Max Unit ICES Collector- Emitter Cutoff Current = -45 V , VBE = 0 = -60 V , VBE = 0 = -80 V , VBE = 0 = -100 V , VBE = 0 IC
15	BD244B	Comset Semiconductors	Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings VCE VCE VCE VCE Test Condition(s) Min Typ Max Unit ICES Collector- Emitter Cutoff Current = -45 V , VBE = 0 = -60 V , VBE = 0 = -80 V , VBE = 0 = -100 V , VBE = 0 IC
16	BD245B	Comset Semiconductors	NPN SILICON POWER TRANSISTORS Symbol Ratings VCE VCE VCE VCE Test Condition(s) = 55 V , VBE = 0 = 70 V , VBE = 0 = 90 V , VBE = 0 = 115 V , VBE = 0 BD245 BD245A BD245B BD245C BD245 BD245A BD245B BD245C BD245 BD245A BD245B BD245C Min Typ Max Unit ICES Collector- Emitter Cu
17	BD245C	Comset Semiconductors	NPN SILICON POWER TRANSISTORS Symbol Ratings VCE VCE VCE VCE Test Condition(s) = 55 V , VBE = 0 = 70 V , VBE = 0 = 90 V , VBE = 0 = 115 V , VBE = 0 BD245 BD245A BD245B BD245C BD245 BD245A BD245B BD245C BD245 BD245A BD245B BD245C Min Typ Max Unit ICES Collector- Emitter Cu
18	BD241	Comset Semiconductor	NPN transistors
19	BD203	Comset Semiconductors	SILCON EPITAXIAL-BASE POWER TRANSISTORS ataSheet4U.co.kr/ NPN BD201 – BD203 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICEO ICBO IEBO VCBO VCEO VEBO Ratings Collector Cutoff Current Test Condition(s) VCE=30 V, IB=0V Min 60 45 60 5 30 30 25 7 1.5 2.5 - Typ - Max
20	BD239C	Comset Semiconductors	Medium Power Linear/Switching /10/2012 COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BD239 – A – B – C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCE=30 V VCE=30 V VCE=60 V VCE=60 V Min 45 60 80