| No. | Partie # | Fabricant | Description | Fiche Technique |
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Comchip Technology |
GENERAL PURPOSE TRANSISTORS -Epitaxial planar die construction -Device is designed as a general purpose amplifier and switching. -Useful dynamic range exceeds to 600mA As a switch and to 100MHz as an amplifier. 0.044 (1.10) 0.035 (0.90) 0.056 (1.40) 0.047 (1.20) SOT-23 0.119 ( |
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Comchip Technology |
High Voltage Transistors This device is designed for application as a video output to drive color CRT and other high voltage applications SOT-23 .119 (3.0) .110 (2.8) .020 (0.5) Top View .056 (1.40) .047 (1.20) 3 2 EMITTER .020 (0.5) .020 (0.5) .103 (2.6) .086 (2.2) |
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Comchip Technology |
High Voltage Transistors This device is designed for application as a video output to drive color CRT and other high voltage applications SOT-23 .119 (3.0) .110 (2.8) .020 (0.5) Top View .056 (1.40) .047 (1.20) 3 2 EMITTER .020 (0.5) .020 (0.5) .103 (2.6) .086 (2.2) |
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Comchip Technology |
Surface Mount Switching Diodes • Fast switching Speed. • Electrically ldentical to Standerd JEDEC • Surface Mount Package ldeally Suited for Automatic lnsertion. • Pb free product are available : 99% Sn above can meet RoHS environment substance directive request POWER SOD-523 M |
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Comchip Technology |
GENERAL PURPOSE TRANSISTORS -Epitaxial planar die construction -As complementary type, the PNP transistor MMBT3906-G is recommended 0.056 (1.40) 0.047 (1.20) SOT-23 0.119 (3.00) 0.110 (2.80) 3 1 0.083 (2.10) 2 0.066 (1.70) 0.006 (0.15) 0.002 (0.05) 0.103 (2.60) 0.086 (2.20) |
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Comchip Technology |
GENERAL PURPOSE TRANSISTORS -Epitaxial planar die construction -As complementary type, the NPN transistor MMBT3904-G is recommended 0.056 (1.40) 0.047 (1.20) SOT-23 0.119 (3.00) 0.110 (2.80) 3 1 0.083 (2.10) 2 0.066 (1.70) 0.006 (0.15) 0.002 (0.05) 0.103 (2.60) 0.086 (2.20) |
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Comchip Technology |
PNP Transistor Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT2222A) Ideal for Medium Power Amplification and Switching TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33) 1 2 max. .004 (0.1) Pin Configuration 1 = |
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Comchip Technology |
PNP Transistor Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT2222A) Ideal for Medium Power Amplification and Switching TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33) 1 2 max. .004 (0.1) Pin Configuration 1 = |
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Comchip Technology |
Small Signal Transistor -NPN silicon epitaxial planar transistor for switching and amplifier application. Mechanical data -Case: SOT-23, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. -Approx. weight: 0.008 grams Diagram: Collector 3 1 Base 2 Emit |
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Comchip Technology |
GENERAL PURPOSE TRANSISTORS -Power dissipation P C =0.3W 0.056(1.40) 0.047(1.20) SOT-23 0.119(3.00) 0.110(2.80) 3 Marking: M1J Collector 3 0.044(1.10) 0.035(0.90) 1 0.083(2.10) 0.066(1.70) 2 0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20) 1 Base 0.020(0.50) 0.013(0.35) 0 |
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Comchip Technology |
GENERAL PURPOSE TRANSISTORS -Epitaxial planar die construction -Device is designed as a general purpose amplifier and switching. 0.056 (1.40) 0.047 (1.20) SOT-23 0.119 (3.00) 0.110 (2.80) 3 1 0.083 (2.10) 0.066 (1.70) 0.044 (1.10) 0.035 (0.90) 2 0.006 (0.15) 0.002 (0.05) 0. |
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