| No. | Partie # | Fabricant | Description | Fiche Technique |
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Comchip Technology |
MOSFET -High density cell design for low R DS(ON) . -Voltage control small signal switch. -Rugged and reliable. -High saturation current capability. 0.054(1.35) 0.045(1.15) 0.087(2.20) 0.070(1.80) SOT-323 D Marking: K72 Equivalent Circuit D 0.044(1.10) 0 |
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Comchip |
MOSFET -Small Signal MOSFET. -ESD protected: 1000V. Marking: 702 Equivalent Circuit D G : Gate S : Source G D : Drain S 0.055 (1.40) 0.047 (1.20) 0.044 (1.11) 0.035 (0.89) SOT-23 0.120 (3.04) 0.110 (2.80) 3 12 0.080 (2.04) 0.070 (1.78) 0.007 (0.18) 0.00 |
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Comchip |
MOSFET -Power dissipation : 0.35W Equivalent Circuit D G : Gate G S : Source D : Drain S SOT-23 0.056(1.40) 0.047(1.20) 0.044(1.10) 0.035(0.90) 0.119(3.00) 0.110(2.80) D GS 0.083(2.10) 0.066(1.70) 0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20) Maxim |
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Comchip |
MOSFET Power dissipation : 0.35W Equivalent Circuit D G : Gate G S : Source D : Drain S SOT-23 0.056(1.40) 0.047(1.20) 0.044(1.10) 0.035(0.90) 0.119(3.00) 0.110(2.80) D GS 0.083(2.10) 0.066(1.70) 0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20) Maximu |
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