| No. | Partie # | Fabricant | Description | Fiche Technique |
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Cnelectr |
NPN Silicon Epitaxial Transistors • High DC Current Gain and excellent hFE Linearity hFE(1) =140-600 (V CE=1.0V, IC=0.5A) hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) NPN Silicon Epitaxial Transistors TO-92 A E Pin Configuration Bottom View E C B Maximum Ratings Symbol V C |
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Cnelectr |
NPN Transistor • • • • Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC NPN Silicon Plastic-Encapsulate Transistor TO-92 Pin Configuration Bottom View |
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