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Cmos |
N-Ch 30V Fast Switching MOSFETs a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. Features BVDSS 30V RDSON 8m ID 50A Applications High Frequency Point-of- |
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Cmos |
P-Channel 30-V (D-S) MOSFET Advanced high cell density Trench technology Fast switching speed Lower On-resistance 100% EAS Guaranteed Simple Drive Requirement Absolute Maximum Ratings Product Summery BVDSS -30V RDSON 8mΩ ID -50A Applications DC-DC Converters Desktop PCs LE |
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Cmos |
N-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% avalanche tested Green Device Available Absolute Maximum Ratings Product Summery BVDSS 30V RDSON 7m ID 70A Applications High Frequency Point- |
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Cmos |
N-Channel 60V MOSFET 55A,60V.RDS(ON)=0.011Ω@VGS=10V N-channel-Enhancement mode Low Threshold Drive 100% Avalanche Tested Green Device Available Absolute Maximum Ratings Product Summery BVDSS 60V RDSON 11m ID 55A Applications DC-DC & DC-AC Converters Motor Control, A |
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Cmos |
N-Channel 60V MOSFET 50A,60V.RDS(ON)=0.013Ω@VGS=10V N-channel-Enhancement mode Low Threshold Drive 100% Avalanche Tested Green Device Available Absolute Maximum Ratings Product Summery BVDSS 60V RDSON 13m ID 50A Applications DC-DC & DC-AC Converters Motor Control, A |
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Cmos |
60V N-Channel MOSFET 20A,60V.RDS(ON)=0.046Ω@VGS=10V Fast switching Low Threshold Drive Absolute Maximum Ratings Product Summery BVDSS 60V RDSON 46m ID 20A Applications Power Supplies Converters Power Motor Controls Bridge Circuits TO252 / TO251 Pin Configuration GD |
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Cmos |
N-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available Absolute Maximum Ratings Product Summery BVDSS 30V RDSON 4.1m ID 80A Applications High Frequency Point- |
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Cmos |
P-Channel 30-V (D-S) MOSFET BVDSS -30V RDSON 30m Applications DC-DC Converters Desktop PCs LED controller ID -30A Advanced high cell density Trench technology Fast switching speed Lower On-resistance 100% EAS Guaranteed Simple Drive Requirement Absolute Maximum Ratings TO |
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Cmos |
100V N-Channel MOSFET Advanced high cell density Trench technology Super Low Gate Charge Mounting Information Provided for the DPAK Package 100% avalanche tested Green Device Available Absolute Maximum Ratings Product Summery BVDSS 100V RDSON 0.165 ID 12A Application |
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Cmos |
P-Channel 30-V (D-S) MOSFET BVDSS -30V RDSON 22m Applications DC-DC Converters Desktop PCs LED controller ID -30A Advanced high cell density Trench technology Fast switching speed Lower On-resistance 100% EAS Guaranteed Simple Drive Requirement Absolute Maximum Ratings TO |
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Cmos |
N-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available Absolute Maximum Ratings Product Summery BVDSS 30V RDSON 5.2m ID 80A Applications High Frequency Point- |
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Cmos |
N-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% avalanche tested Green Device Available Absolute Maximum Ratings Product Summery BVDSS 30V RDSON 5.5m ID 95A Applications High Frequency Poin |
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Cmos |
600V N-Channel MOSFET BVDSS 600V RDSON 5 ID 2A Applications Power Supply PFC High Current,High Speed Switching 2A, 600V, RDS(on) = 5Ω @VGS = 10 V Fast switching 100% Avalanche Tested TO252 / TO251 Pin Configuration D Improved dv/dt capability ESD Improved capabilit |
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Cmos |
N-Ch 30V Fast Switching MOSFETs a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. Features BVDSS 30V RDSON 7m ID 60A Applications High Frequency Point-of- |
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CMD |
CMOS DTMF Integrated Receiver |
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CMD |
CMOS DTMF Integrated Receiver |
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Cmos |
N-Channel Transistor TO252 / TO251 Pin Configuration Low gate charge (typical 27 nC) Low Crss ( typical 17 pF) Fast switching 100%avalanche tested Improved dv/dt capability D G S TO252 G D S TO251 (CMD5N50) (CMU5N50) Absolute Maximum Ratings TC = 25°C unless othe |
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Cmos |
600V N-Channel MOSFET BVDSS 600V RDSON 2.5 Applications Power Supply PFC Ballast ID 4.5A 4.5A, 600V, RDS (on) = 2.5 Ω @VGS = 10 V 100% Avalanche Tested TO252 / TO251 Pin Configuration Improved dv/dt capability GDS TO252 Absolute Maximum Ratings TC = 25°C unless |
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Cmos |
N-Ch 20V Fast Switching MOSFETs a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. Features Simple Drive Requirement Low Gate Charge Fast Switching Ultra-Low R |
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