Champion Microelectronic CMS fiche technique

No.	Partie #	Fabricant	Description
1	CMS-S040-020	Champion Microelectronic	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 1.016 * 1.016 mm 2 Bond Pad size(B) : 0.889 * 0.889 mm 2 A Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag B Metalization : Cathode
2	CMS-S035-040	Champion Microelectronic	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 0.889 * 0.889 mm 2 Bond Pad size(B) : 0.762 * 0.762 mm 2 A Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag B Metalization : Cathode
3	CMS-S032-020	Champion Microelectronic	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 0.814 * 0.814 mm 2 Bond Pad size(B)) : 0.686 * 0.686 mm 2 A Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag B Metalization : Cathod
4	CMS-S032-040	Champion Microelectronic	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 0.814 * 0.814 mm 2 Bond Pad size(B) : 0.686 * 0.686 mm 2 A Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag B Metalization : Cathode
5	CMS-S035-020	Champion Microelectronic	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 0.889 * 0.889 mm 2 Bond Pad size(B) : 0.762 * 0.762 mm 2 A Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag B Metalization : Cathode
6	CMS-S040-040L	Champion Microelectronic	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 1.016 * 1.016 mm 2 Bond Pad size(B) : 0.889 * 0.889 mm 2 A Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag B Metalization : Cathode