Champion CMS fiche technique

No.	Partie #	Fabricant	Description
1	CMS-S060-080	Champion	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current A B Electrical Characteristics Chip size(A): 1.524* 1.524 mm2 Bond Pad size(B) : 1.422 *1.422 mm2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag Met
2	CMS-S040-020	Champion Microelectronic	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 1.016 * 1.016 mm 2 Bond Pad size(B) : 0.889 * 0.889 mm 2 A Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag B Metalization : Cathode
3	CMS-S050-040	Champion	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 1.270 * 1.270 mm 2 Bond Pad size(B) : 1.143 *1.143 mm 2 A Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag B Metalization : Cathode
4	CMS-S035-040	Champion Microelectronic	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 0.889 * 0.889 mm 2 Bond Pad size(B) : 0.762 * 0.762 mm 2 A Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag B Metalization : Cathode
5	CMS-S060-040	Champion	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 1.524* 1.524 mm 2 Bond Pad size(B) : 1.422 *1.422 mm 2 A Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag B Metalization : Cathode T
6	CMS-S032-060	Champion	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current A B Electrical Characteristics Chip size(A): 0.814 * 0.814 mm2 Bond Pad size(B) : 0.686 * 0.686 mm2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag M
7	CMS-S035-060	Champion	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current A B Electrical Characteristics Chip size(A): 0.889 * 0.889 mm2 Bond Pad size(B) : 0.762 * 0.762 mm2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag M
8	CMS-S035-080	Champion	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current A B Electrical Characteristics Chip size(A): 0.889 * 0.889 mm2 Bond Pad size(B) : 0.762 * 0.762 mm2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag M
9	CMS-S040-060	Champion	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current A B Electrical Characteristics Chip size(A): 1.016 * 1.016 mm2 Bond Pad size(B) : 0.889 * 0.889 mm2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag M
10	CMS-S040-080	Champion	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current A B Electrical Characteristics Chip size(A): 1.016 * 1.016 mm2 Bond Pad size(B) : 0.889 * 0.889 mm2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag M
11	CMS-S060-020	Champion	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current A B Electrical Characteristics Chip size(A): 1.524* 1.524 mm2 Bond Pad size(B) : 1.422 *1.422 mm2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag Met
12	CMS-S072-020	Champion	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current A B Electrical Characteristics Chip size(A): 1.830* 1.830 mm2 Bond Pad size(B) : 1.702 *1.702 mm2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag Met
13	CMS-S032-020	Champion Microelectronic	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 0.814 * 0.814 mm 2 Bond Pad size(B)) : 0.686 * 0.686 mm 2 A Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag B Metalization : Cathod
14	CMS-S032-040	Champion Microelectronic	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 0.814 * 0.814 mm 2 Bond Pad size(B) : 0.686 * 0.686 mm 2 A Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag B Metalization : Cathode
15	CMS-S035-020	Champion Microelectronic	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 0.889 * 0.889 mm 2 Bond Pad size(B) : 0.762 * 0.762 mm 2 A Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag B Metalization : Cathode
16	CMS-S040-040L	Champion Microelectronic	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 1.016 * 1.016 mm 2 Bond Pad size(B) : 0.889 * 0.889 mm 2 A Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag B Metalization : Cathode
17	CMS-S040-040	Champion	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 1.016 * 1.016 mm 2 Bond Pad size(B) : 0.889 * 0.889 mm 2 A Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag B Metalization : Cathode
18	CMS-S060-060	Champion	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 1.524* 1.524 mm 2 Bond Pad size(B) : 1.422 *1.422 mm 2 A Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag B Metalization : Cathode T
19	CMS-S072-060	Champion	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 1.830* 1.830 mm 2 Bond Pad size(B) : 1.702 *1.702 mm 2 A Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag B Metalization : Cathode T
20	CMS-S072-040	Champion	SCHOTTKY BARRIER DIODE : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 1.830* 1.830 mm 2 Bond Pad size(B) : 1.702 *1.702 mm 2 A Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag B Metalization : Cathode T