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Central Semiconductor Corp |
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE ARACTERISTICS (TA=25oC unless otherwise noted) CMPD2004 CMPD2003 CMPD2004S SYMBOL TEST CONDITIONS MIN MAX MIN MAX BVR IR=100 µA 250 300 IR VR=200V 100 IR VR=200V, TA=150oC 100 IR VR=240V 100 o IR VR=240V, TA=150 C 100 VF IF=100mA 1.0 1.0 UNIT V nA µ |
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Central Semiconductor Corp |
SCHOTTKY DIODES IR=100μA 30 VF IF=2.0mA 0.29 0.33 VF IF=15mA 0.37 0.45 VF IF=100mA 0.51 1.00 CJ VR=0, f=1.0MHz 20 trr IF=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 UNITS V mA mA mA mW °C °C/W UNITS nA μA V V V V pF ns R8 (8-September 2016) CMPSH-3 CMPSH-3A CMPSH |
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Central Semiconductor Corp |
SURFACE MOUNT LOW VCE(SAT) PNP POWER TRANSISTOR 50mA 250 VBE(SAT) IC=1.0A, IB=10mA 0.8 hFE VCE=2.0V, IC=10mA 300 hFE VCE=2.0V, IC=500mA 250 hFE VCE=2.0V, IC=1.0A 200 hFE VCE=2.0V, IC=2.0A 150 fT VCE=5V, IC=50mA, f=50MHz 100 MAX 100 10 100 250 450 750 1.0 800 UNITS nA µA nA V V V mV mV mV V MHz |
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Central Semiconductor Corp |
HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR TEST CONDITIONS VCE=5.0V, IC=10mA VCE=5.0V, IC=100mA VCE=5.0V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz MIN 10,000 10,000 125 MAX UNITS 8.0 MHz pF All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 R1 203 |
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Central Semiconductor Corp |
NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR 0.50 0.75 0.75 40 50 200 206 SYMBOL hFE hFE fT Cob Cib TEST CONDITIONS VCE=10V, IC=50mA VCE=10V, IC=100mA VCE=10V, IC=10mA, f=10MHz VCB=20V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz MIN 45 20 20 MAX UNITS 7.0 130 MHz pF pF All dimensions in i |
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Central Semiconductor Corp |
SURFACE MOUNT NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR MHz pF pF 200 0.50 1.0 UNITS nA nA V V V V V V V VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA VCE=10V, IC=10mA, f=10MHz VCB=20V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz R1 ( 14-June 2001) Central TM CMPTA46 SURFACE MOUN |
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Central Semiconductor Corp |
HIGH CURRENT SWITCHING DIODE VR=90V, TA=150oC IF=10mA MIN 90 MAX 100 100 0.75 UNIT V nA µA V 130 SYMBOL VF VF VF VF CT trr TEST CONDITIONS MIN IF=50mA IF=100mA IF=200mA IF=400mA VR=0, f=1 MHz IF=IR=30mA, RECOV. TO 3.0mA, RL=100Ω MAX 0.84 0.90 1.00 1.25 35 50 UNIT V V V V pF |
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Central Semiconductor Corp |
SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE wer Dissipation Operating and Storage Junction Temperature Thermal Resistance CMPD2003 CMPD2004 CMPD2003C CMPD2004C CMPD2003S CMPD2004S 200 240 250 300 200 200 250 225 625 625 4000 4000 1000 1000 350 -65 to +150 357 UNITS V V mA mA mA mA mA mW °C ° |
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Central Semiconductor Corp |
SILICON SWITCHING DIODE : (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR IR IR IR BVR VF VF VF VF VF VF CT VR=125V VR=125V, TA=150°C VR=180V VR=180V, TA=150°C IR=5.0µA IF=1.0mA IF=10mA IF=50mA IF=100mA IF=200mA IF=300mA VR=0, f=1.0MHz 1.0 3.0 10 5. |
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Central Semiconductor Corp |
HIGH SPEED SWITCHING DIODE s 25 0.72 1.0 4.0 4.0 138 All dimensions in inches (mm). NO CONNECTION A C R2 139 |
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Central Semiconductor Corp |
HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE VR=90V, TA=150oC IF=10mA IF=50mA IF=100mA IF=200mA MIN 120 MAX 175 100 100 0.75 0.84 0.90 1.00 UNITS V nA µA V V V V 140 SYMBOL VF CT trr trr TEST CONDITIONS IF=400mA VR=0, f=1 MHz IF=IR=30mA, RECOV. TO 1.0mA, RL=100Ω IF=IR=10mA, RECOV. TO 1.0mA, |
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Central Semiconductor Corp |
HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE VR=90V, TA=150oC IF=10mA IF=50mA IF=100mA IF=200mA MIN 120 MAX 175 100 100 0.75 0.84 0.90 1.00 UNITS V nA µA V V V V 140 SYMBOL VF CT trr trr TEST CONDITIONS IF=400mA VR=0, f=1 MHz IF=IR=30mA, RECOV. TO 1.0mA, RL=100Ω IF=IR=10mA, RECOV. TO 1.0mA, |
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Central Semiconductor Corp |
N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET TICS (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN VGS=20V, VDS=0V IGSSF IGSSR VGS=20V, VDS=0V IDSS VDS=60V, VGS=0V IDSS VDS=60V, VGS=0V, Tj=125°C ID(ON) VGS=10V, VDS ≥ 2VDS(ON) 500 BVDSS VGS=0V, ID=10µA 60 VGS(th) VDS=VGS, ID=250µA 1.0 |
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Central Semiconductor Corp |
N-CHANNEL JFET S=7.0V VDS=20V, VGS=5.0V VDS=20V, VGS=12V, TA=100°C VDS=20V, VGS=7.0V, TA=100°C VDS=20V, VGS=5.0V, TA=100°C IG=1.0µA VDS=20V, ID=1.0nA IG=1.0mA ID=12mA ID=6.0mA ID=3.0mA ID=1.0mA, VGS=0 VGS=0, ID=0, f=1.0kHz VDS=20V, VGS=0, f=1.0MHz - 0.5 - 0.2 50 1 |
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Central Semiconductor Corp |
SCHOTTKY DIODES IR=100μA 30 VF IF=2.0mA 0.29 0.33 VF IF=15mA 0.37 0.45 VF IF=100mA 0.51 1.00 CJ VR=0, f=1.0MHz 20 trr IF=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 UNITS V mA mA mA mW °C °C/W UNITS nA μA V V V V pF ns R8 (8-September 2016) CMPSH-3 CMPSH-3A CMPSH |
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Central Semiconductor Corp |
NPN SILICON TRANSISTOR IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=1.0V, IC=150mA VCE=10V, IC=150mA VCE=10V, IC=500mA VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz 75 40 6.0 0.6 35 50 75 50 100 40 300 MAX 10 10 10 10 0.3 1.0 1.2 2.0 300 |
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Central Semiconductor Corp |
NPN SILICON LOW NOISE TRANSISTOR .0kHz, BW=200Hz MIN MAX 10 10 10 UNITS nA µA nA V V V V V 60 60 5.0 0.35 0.95 --800 6.0 6.0 3.0 250 --- pF pF dB 162 All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 163 |
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Central Semiconductor Corp |
SURFACE MOUNT LOW VCE(SAT) NPN POWER TRANSISTOR VCE=2.0V, IC=1.0A VCE=2.0V, IC=3.0A VCE=2.0V, IC=5.0A VCB=10V, f=1.0MHz VCE=10V, IC=500mA MIN TYP MAX 100 100 UNITS nA nA V V V mV mV mV mV 45 15 6.0 30 60 85 145 200 200 175 150 100 100 50 150 200 300 pF MHz R0 ( 13-December 2001) Central TM |
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Central Semiconductor Corp |
PNP TRANSISTOR BVCEO IC=1.0mA BVEBO IE=10µA VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=50mA, IB=5.0mA VBE(SAT) IC=10mA, IB=1.0mA VBE(SAT) IC=50mA, IB=5.0mA hFE VCE=1.0V, IC=0.1mA hFE VCE=1.0V, IC=1.0mA hFE VCE=1.0V, IC=10mA hFE VCE=1.0V, IC=50mA hFE V |
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Central Semiconductor Corp |
PNP SILICON TRANSISTOR 1.0mA IE=100µA IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA VCE=5.0V, IC=0.1mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=500µA, f=20MHz VCB=5.0V, IE=0, f=1.0MHz VCE=5.0V, IC=1.0mA, f=1.0kHz UNITS nA nA V V V V V MHz pF 178 SYMBOL NF NF TEST CONDI |
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