| No. | Partie # | Fabricant | Description | Fiche Technique |
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Central Semiconductor |
ISOLATED NPN HIGH CURRENT SILICON TRANSISTORS 10mA, IB=1.0mA 0.15 VCE(SAT) IC=50mA, IB=5.0mA 0.20 VBE(SAT) IC=10mA, IB=1.0mA 1.00 VBE(SAT) IC=50mA, IB=5.0mA 1.00 hFE VCE=5.0V, IC=1.0mA 80 VCE=5.0V, IC=10mA 80 250 hFE hFE VCE=5.0V, IC=50mA 30 hFE VCE=10V, IC=1.0A 10 fT VCE=10V, IC=10mA, f=100MHz |
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Central Semiconductor |
ISOLATED COMPLEMENTARY NPN & PNP HIGH VOLTAGE SILICON TRANSISTORS VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) hFE hFE hFE hFE TEST CONDITIONS VCB=350V VCE=350V VCB=400V VCE=400V VBE=4.0V IC=100µA IC=100µA IC=1.0mA IE=10µA IC=1.0mA, IB=0.1mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA VCE=10V, IC=1.0mA VCE=10V, I |
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Central Semiconductor |
ISOLATED NPN SILICON TRANSISTORS VCE(SAT) IC=50mA, IB=5.0mA 0.20 VBE(SAT) IC=10mA, IB=1.0mA 1.00 VBE(SAT) IC=50mA, IB=5.0mA 1.00 hFE VCE=5.0V, IC=1.0mA 80 VCE=5.0V, IC=10mA 80 250 hFE hFE VCE=5.0V, IC=50mA 30 fT VCE=10V, IC=10mA, f=100MHz 100 300 Cob VCB=10V, IE=0, f=1.0MHz 6.0 Cib |
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Central Semiconductor |
ISOLATED NPN HIGH VOLTAGE SILICON TRANSISTORS C=100µA BVCEO IC=1.0mA BVEBO IE=10µA VCE(SAT) IC=1.0mA, IB=0.1mA VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=50mA, IB=5.0mA VBE(SAT) IC=10mA, IB=1.0mA hFE VCE=10V, IC=1.0mA hFE VCE=10V, IC=10mA hFE VCE=10V, IC=50mA hFE VCE=10V, IC=100mA fT VCE=10V, IC=10m |
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