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Central Semiconductor |
SURFACE MOUNT SILICON LOW LEVEL ZENER DIODES |
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Central Semiconductor |
PNP TRANSISTOR BVCEO IC=1.0mA BVEBO IE=10µA VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=50mA, IB=5.0mA VBE(SAT) IC=10mA, IB=1.0mA VBE(SAT) IC=50mA, IB=5.0mA hFE VCE=1.0V, IC=0.1mA hFE VCE=1.0V, IC=1.0mA hFE VCE=1.0V, IC=10mA hFE VCE=1.0V, IC=50mA hFE V |
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Central Semiconductor |
SURFACE MOUNT COMPLEMENTARY SILICON DARLINGTON TRANSISTORS |
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Central Semiconductor Corp |
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE ARACTERISTICS (TA=25oC unless otherwise noted) CMPD2004 CMPD2003 CMPD2004S SYMBOL TEST CONDITIONS MIN MAX MIN MAX BVR IR=100 µA 250 300 IR VR=200V 100 IR VR=200V, TA=150oC 100 IR VR=240V 100 o IR VR=240V, TA=150 C 100 VF IF=100mA 1.0 1.0 UNIT V nA µ |
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Central Semiconductor Corp |
SCHOTTKY DIODES IR=100μA 30 VF IF=2.0mA 0.29 0.33 VF IF=15mA 0.37 0.45 VF IF=100mA 0.51 1.00 CJ VR=0, f=1.0MHz 20 trr IF=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 UNITS V mA mA mA mW °C °C/W UNITS nA μA V V V V pF ns R8 (8-September 2016) CMPSH-3 CMPSH-3A CMPSH |
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Central Semiconductor |
SURFACE MOUNT SILICON LOW LEVEL ZENER DIODES |
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Central Semiconductor |
SURFACE MOUNT SILICON ZENER DIODE |
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Central Semiconductor |
SURFACE MOUNT COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS |
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Central Semiconductor Corp |
SURFACE MOUNT LOW VCE(SAT) PNP POWER TRANSISTOR 50mA 250 VBE(SAT) IC=1.0A, IB=10mA 0.8 hFE VCE=2.0V, IC=10mA 300 hFE VCE=2.0V, IC=500mA 250 hFE VCE=2.0V, IC=1.0A 200 hFE VCE=2.0V, IC=2.0A 150 fT VCE=5V, IC=50mA, f=50MHz 100 MAX 100 10 100 250 450 750 1.0 800 UNITS nA µA nA V V V mV mV mV V MHz |
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Central Semiconductor Corp |
HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR TEST CONDITIONS VCE=5.0V, IC=10mA VCE=5.0V, IC=100mA VCE=5.0V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz MIN 10,000 10,000 125 MAX UNITS 8.0 MHz pF All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 R1 203 |
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Central Semiconductor Corp |
NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR 0.50 0.75 0.75 40 50 200 206 SYMBOL hFE hFE fT Cob Cib TEST CONDITIONS VCE=10V, IC=50mA VCE=10V, IC=100mA VCE=10V, IC=10mA, f=10MHz VCB=20V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz MIN 45 20 20 MAX UNITS 7.0 130 MHz pF pF All dimensions in i |
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Central Semiconductor Corp |
SURFACE MOUNT NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR MHz pF pF 200 0.50 1.0 UNITS nA nA V V V V V V V VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA VCE=10V, IC=10mA, f=10MHz VCB=20V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz R1 ( 14-June 2001) Central TM CMPTA46 SURFACE MOUN |
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Central Semiconductor |
PNP Silicon Transistor ENHANCED SPECIFICATIONS: ♦ BVCBO from 300V min to 350V min. ♦ BVCEO from 300V min to 350V min. ♦ hFE from 25 min to 50 min. SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 350 350 6.0 500 350 -65 to +150 357 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACT |
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Central Semiconductor |
SURFACE MOUNT PNP HIGH VOLTAGE SILICON TRANSISTOR 0V, IC=100mA VCE=10V, IC=10mA, f=10MHz VCB=20V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz MIN MAX 100 500 100 UNITS nA nA nA V V V V V V V V 400 400 400 6.0 0.40 0.50 0.75 0.75 40 50 45 20 20 200 7.0 130 MHz pF pF R2 (13-November 2002) Central www |
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Central Semiconductor |
SURFACE MOUNT PNP SILICON CHOPPER TRANSISTOR 0mA VCC=10V, IC=10mA, IB1=IB2=1.0mA VCC=10V, IC=10mA, IB1=IB2=1.0mA 40 35 25 100 40 150 400 3.0 750 MAX 100 100 0.15 0.20 0.85 1.00 400 UNITS V V V mA mW °C °C/W UNITS nA nA V V V V V V V pF ns ns µs ns R3 (27-January 2010) CMPT404A SURFACE MOU |
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Central Semiconductor |
SURFACE MOUNT SILICON LOW LEVEL ZENER DIODES |
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Central Semiconductor |
SURFACE MOUNT SILICON ZENER DIODE |
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Central Semiconductor |
SURFACE MOUNT SILICON ZENER DIODE |
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Central Semiconductor |
SURFACE MOUNT DUAL / COMMON ANODE SILICON ZENER DIODES |
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Central Semiconductor |
SURFACE MOUNT COMPLEMENTARY SILICON DARLINGTON TRANSISTORS |
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