| No. | Partie # | Fabricant | Description | Fiche Technique |
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Central Semiconductor |
N-CHANNEL LR POWER MOSFET • High voltage capability (VDS=600V) • Low gate charge (Qgs=4.45nC TYP) • Ultra low rDS(ON) (0.3Ω TYP) MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (Steady S |
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Central Semiconductor |
SURFACE MOUNT SILICON N-CHANNEL LR POWER MOSFET • High voltage capability (VDS=600V) • Low gate charge (Qgs=3.54nC TYP) • Ultra low rDS(ON) (0.48Ω TYP) MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V Conti |
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Central Semiconductor |
SURFACE MOUNT SILICON N-CHANNEL LR POWER MOSFET • High voltage capability (VDS=600V) • Low gate charge (Qgs=2.04nC TYP) • Ultra low rDS(ON) (0.65Ω TYP) MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (Steady |
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Central Semiconductor |
N-CHANNEL LR POWER MOSFET • High voltage capability (VDS=800V) • Low gate charge (Qgs=2.8nC TYP) • Ultra low rDS(ON) (0.8Ω TYP) MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (Steady St |
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Central Semiconductor |
N-CHANNEL MOSFET • High voltage capability (VDS=800V) • Low gate charge (Qg(tot)=11.3nC TYP) • Low rDS(ON) (3.8Ω TYP) MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (Steady Sta |
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Central Semiconductor |
N-CHANNEL SUPER JUNCTION MOSFET • High voltage capability (VDS=650V) • Low gate charge (Qgs=11nC) • Low rDS(ON) (0.13Ω) MAXIMUM RATINGS: (TC=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TC=100°C) Pulsed Drain Current Diode Forw |
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Central Semiconductor |
SILICON N-CHANNEL MEDIUM POWER MOSFET • High voltage capability (VDS=650V) • Low gate charge (Qgs=3.0nC) • Low rDS(ON) (2.44Ω) MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V Continuous Drain Curren |
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Central Semiconductor |
N-CHANNEL SUPER JUNCTION MOSFET • High voltage capability (VDS=650V) • Low gate charge (Qgs=4nC) • Low rDS(ON) (0.39Ω) MAXIMUM RATINGS: (TC=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TC=100°C) Pulsed Drain Current Diode Forwa |
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Central Semiconductor |
N-CHANNEL LR POWER MOSFET • High voltage capability (VDS=700V) • Low gate charge (Qgs=2.5nC) • Low rDS(ON) (0.48Ω) MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL UNITS Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS 30 V Continuous Drain Current |
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Central Semiconductor |
SILICON N-CHANNEL POWER MOSFET • High voltage capability (VDS=650V) • Low gate charge (Qgs=8.0nC) • Low rDS(ON) (0.88Ω) MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V Continuous Drain Curren |
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