No. | Partie # | Fabricant | Description | Fiche Technique |
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Central Semiconductor |
SILICON CONTROLLED RECTIFIER W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS IDRM, IRRM IDRM, IRRM VTM IGT VGT IH IL dv/dt di/dt Rated VDRM, VRRM, RGK=1.0KΩ, TC=25°C Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C IT=1.0A VD=6.0V, R |
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Central Semiconductor |
SILICON CONTROLLED RECTIFIER W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS IDRM, IRRM IDRM, IRRM VTM IGT VGT IH IL dv/dt di/dt Rated VDRM, VRRM, RGK=1.0KΩ, TC=25°C Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C IT=1.0A VD=6.0V, R |
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Central Semiconductor |
SILICON CONTROLLED RECTIFIER W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS IDRM, IRRM IDRM, IRRM VTM IGT VGT IH IL dv/dt di/dt Rated VDRM, VRRM, RGK=1.0KΩ, TC=25°C Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C IT=1.0A VD=6.0V, R |
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Central Semiconductor |
SILICON CONTROLLED RECTIFIER W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS IDRM, IRRM IDRM, IRRM VTM IGT VGT IH IL dv/dt di/dt Rated VDRM, VRRM, RGK=1.0KΩ, TC=25°C Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C IT=1.0A VD=6.0V, R |
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Central Semiconductor |
SILICON CONTROLLED RECTIFIER W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS IDRM, IRRM IDRM, IRRM VTM IGT VGT IH IL dv/dt di/dt Rated VDRM, VRRM, RGK=1.0KΩ, TC=25°C Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C IT=1.0A VD=6.0V, R |
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Central Semiconductor |
SILICON CONTROLLED RECTIFIER W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS IDRM, IRRM IDRM, IRRM VTM IGT VGT IH IL dv/dt di/dt Rated VDRM, VRRM, RGK=1.0KΩ, TC=25°C Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C IT=1.0A VD=6.0V, R |
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