| No. | Partie # | Fabricant | Description | Fiche Technique |
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Central Semiconductor |
PNP SILICON TRANSISTOR V, IC=0, f=1.0MHz VCE=5.0V, IC=0.2mA, RS=2.0kΩ, f=1.0kHz, BW=200Hz VCC=10V, IC=10mA, RL=990Ω, IB1=IB2=1.0mA VCC=10V, IC=10mA, RL=990Ω, IB1=IB2=1.0mA MAX 20 20 0.25 0.55 0.85 1.05 0.75 6.0 6.0 dB 150 800 hFE VCE=5.0V, IC=10µA hFE VCE=5.0V, IC=2.0 |
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Central Semiconductor |
SURFACE MOUNT NPN SILICON TRANSISTOR |
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Central Semiconductor |
PNP Transistor V, IC=0, f=1.0MHz VCE=5.0V, IC=0.2mA, RS=2.0kΩ, f=1.0kHz, BW=200Hz VCC=10V, IC=10mA, RL=990Ω, IB1=IB2=1.0mA VCC=10V, IC=10mA, RL=990Ω, IB1=IB2=1.0mA MAX 20 20 0.25 0.55 0.85 1.05 0.75 6.0 6.0 dB 150 800 hFE VCE=5.0V, IC=10µA hFE VCE=5.0V, IC=2.0 |
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Central Semiconductor |
SILICON PNP TRANSISTORS T Cc Ce VCB=Rated VCEO VCB= Rated VCEO, TA=150°C VEB=4.0V IC=10µA (BCW67) IC=10µA (BCW68) IC=10mA (BCW67) IC=10mA (BCW68) IE=10µA IC=100mA, IB=10mA IC=500mA, IB=50mA IC=100mA, IB=10mA IC=500mA, IB=50mA VCE=5.0V, IC=50mA, f=20MHz VCB=10V, IE=0, f=1.0 |
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Central Semiconductor |
NPN Transistor (SAT) IC=100mA, IB=10mA VBE(SAT) IC=500mA, IB=50mA hFE VCE=10V, IC=100µA hFE VCE=1.0V, IC=10mA hFE VCE=1.0V, IC=100mA hFE VCE=2.0V, IC=500mA fT VCE=5.0V, IC=50mA, f=20MHz Cc VCB=10V, IE=0, f=1.0MHz Ce VEB=0.5V, IC=0, f=1.0MHz SYMBOL V |
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Central Semiconductor |
Small Signal Transistors AMPL/SWITCH PNP AMPL/SWITCH NPN AMPL/SWITCH NPN AMPL/SWITCH NPN AMPL/SWITCH PNP AMPL/SWITCH PNP AMPL/SWITCH NPN AMPL/SWITCH NPN AMPL/SWITCH PNP AMPL/SWITCH PNP AMPL/SWITCH NPN AMPL/SWITCH PNP AMPL/SWITCH NPN HIGH VOLTAGE NPN AMPL/SWITCH NPN HIGH VOLT |
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Central Semiconductor |
SILICON NPN TRANSISTORS , TA=150°C IEBO VEB=4.0V BVCBO IC=10μA (BCW65) 60 BVCBO IC=10μA (BCW66) 75 BVCEO IC=10mA (BCW65) 32 BVCEO IC=10mA (BCW66) 45 BVEBO IE=10μA 5.0 VCE(SAT) IC=100mA, IB=10mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=100mA, IB=10mA VBE(S |
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Central Semiconductor |
SILICON NPN TRANSISTORS , TA=150°C IEBO VEB=4.0V BVCBO IC=10μA (BCW65) 60 BVCBO IC=10μA (BCW66) 75 BVCEO IC=10mA (BCW65) 32 BVCEO IC=10mA (BCW66) 45 BVEBO IE=10μA 5.0 VCE(SAT) IC=100mA, IB=10mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=100mA, IB=10mA VBE(S |
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Central Semiconductor |
SILICON PNP TRANSISTORS T Cc Ce VCB=Rated VCEO VCB= Rated VCEO, TA=150°C VEB=4.0V IC=10µA (BCW67) IC=10µA (BCW68) IC=10mA (BCW67) IC=10mA (BCW68) IE=10µA IC=100mA, IB=10mA IC=500mA, IB=50mA IC=100mA, IB=10mA IC=500mA, IB=50mA VCE=5.0V, IC=50mA, f=20MHz VCB=10V, IE=0, f=1.0 |
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Central Semiconductor |
SILICON PNP TRANSISTORS T Cc Ce VCB=Rated VCEO VCB= Rated VCEO, TA=150°C VEB=4.0V IC=10µA (BCW67) IC=10µA (BCW68) IC=10mA (BCW67) IC=10mA (BCW68) IE=10µA IC=100mA, IB=10mA IC=500mA, IB=50mA IC=100mA, IB=10mA IC=500mA, IB=50mA VCE=5.0V, IC=50mA, f=20MHz VCB=10V, IE=0, f=1.0 |
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Central Semiconductor |
SILICON PNP TRANSISTORS T Cc Ce VCB=Rated VCEO VCB= Rated VCEO, TA=150°C VEB=4.0V IC=10µA (BCW67) IC=10µA (BCW68) IC=10mA (BCW67) IC=10mA (BCW68) IE=10µA IC=100mA, IB=10mA IC=500mA, IB=50mA IC=100mA, IB=10mA IC=500mA, IB=50mA VCE=5.0V, IC=50mA, f=20MHz VCB=10V, IE=0, f=1.0 |
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Central Semiconductor |
SILICON NPN TRANSISTORS , TA=150°C IEBO VEB=4.0V BVCBO IC=10μA (BCW65) 60 BVCBO IC=10μA (BCW66) 75 BVCEO IC=10mA (BCW65) 32 BVCEO IC=10mA (BCW66) 45 BVEBO IE=10μA 5.0 VCE(SAT) IC=100mA, IB=10mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=100mA, IB=10mA VBE(S |
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Central Semiconductor |
SILICON NPN TRANSISTORS , TA=150°C IEBO VEB=4.0V BVCBO IC=10μA (BCW65) 60 BVCBO IC=10μA (BCW66) 75 BVCEO IC=10mA (BCW65) 32 BVCEO IC=10mA (BCW66) 45 BVEBO IE=10μA 5.0 VCE(SAT) IC=100mA, IB=10mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=100mA, IB=10mA VBE(S |
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Central Semiconductor |
SILICON NPN TRANSISTORS , TA=150°C IEBO VEB=4.0V BVCBO IC=10μA (BCW65) 60 BVCBO IC=10μA (BCW66) 75 BVCEO IC=10mA (BCW65) 32 BVCEO IC=10mA (BCW66) 45 BVEBO IE=10μA 5.0 VCE(SAT) IC=100mA, IB=10mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=100mA, IB=10mA VBE(S |
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Central Semiconductor |
SILICON NPN TRANSISTORS , TA=150°C IEBO VEB=4.0V BVCBO IC=10μA (BCW65) 60 BVCBO IC=10μA (BCW66) 75 BVCEO IC=10mA (BCW65) 32 BVCEO IC=10mA (BCW66) 45 BVEBO IE=10μA 5.0 VCE(SAT) IC=100mA, IB=10mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=100mA, IB=10mA VBE(S |
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Central Semiconductor |
SILICON NPN TRANSISTORS fT Cc Ce VCB=Rated VCEO VCB= Rated VCEO, TA=150°C VEB=4.0V IC=10μA (BCW65) IC=10μA (BCW66) IC=10mA (BCW65) IC=10mA (BCW66) IE=10μA IC=100mA, IB=10mA IC=500mA, IB=50mA IC=100mA, IB=10mA IC=500mA, IB=50mA VCE=5.0V, IC=50mA, f=20MHz VCB=10V, IE=0, f=1. |
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Central Semiconductor |
SILICON NPN TRANSISTORS , TA=150°C IEBO VEB=4.0V BVCBO IC=10μA (BCW65) 60 BVCBO IC=10μA (BCW66) 75 BVCEO IC=10mA (BCW65) 32 BVCEO IC=10mA (BCW66) 45 BVEBO IE=10μA 5.0 VCE(SAT) IC=100mA, IB=10mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=100mA, IB=10mA VBE(S |
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Central Semiconductor |
SILICON PNP TRANSISTORS T Cc Ce VCB=Rated VCEO VCB= Rated VCEO, TA=150°C VEB=4.0V IC=10µA (BCW67) IC=10µA (BCW68) IC=10mA (BCW67) IC=10mA (BCW68) IE=10µA IC=100mA, IB=10mA IC=500mA, IB=50mA IC=100mA, IB=10mA IC=500mA, IB=50mA VCE=5.0V, IC=50mA, f=20MHz VCB=10V, IE=0, f=1.0 |
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Central Semiconductor |
SILICON PNP TRANSISTORS A V V V V mV mV dB R1 (20-November 2009) BCW89 SURFACE MOUNT PNP SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODE: H3 w w w. c e n t r a l s e m i . c o m R1 (20-November 2009) |
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Central Semiconductor |
SILICON PNP TRANSISTORS T Cc Ce VCB=Rated VCEO VCB= Rated VCEO, TA=150°C VEB=4.0V IC=10µA (BCW67) IC=10µA (BCW68) IC=10mA (BCW67) IC=10mA (BCW68) IE=10µA IC=100mA, IB=10mA IC=500mA, IB=50mA IC=100mA, IB=10mA IC=500mA, IB=50mA VCE=5.0V, IC=50mA, f=20MHz VCB=10V, IE=0, f=1.0 |
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