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Central Semiconductor |
SILICON NPN TRANSISTORS ) VBE(SAT) VBE(ON) VBE(ON) hFE hFE hFE hFE hFE hFE hFE hFE hfe fT Cob Cib NF VCB=30V VCB=30V, TA=150°C IC=10mA, IB=0.5mA IC=100mA, IB=5.0mA IC=10mA, IB=0.5mA IC=100mA, IB=5.0mA VCE=5.0V, IC=2.0mA 580 VCE=5.0V, IC=10mA VCE=5.0V, IC=10μA (BC5 |
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Central Semiconductor |
SILICON ZENER DIODES |
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Central Semiconductor |
N-CHANNEL SILICON JFET - - 0.2 - - ID(OFF) VDS=20V, VGS=5.0V, TA=100°C - - - - - 0.2 BVGSS IG=1.0µA 40 - 40 40 - VGS(OFF) VDS=20V, ID=1.0nA 4.0 10 2.0 5.0 0.5 3.0 VGS(f) VDS=0, IG=1.0mA - 1.0 - 1.0 - 1.0 VDS(ON) ID=12mA - 0.4 - - - - VDS( |
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Central Semiconductor Corp |
Small Signal Transistors 0 0.5 50 50 4,000 150 2,000 2,000 2,000 150 150 30 30 10 10 5.0 5.0 5.0 5.0 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 10 10 10 2.0 10 10 10 1.0 1.0 1.0 5.0 5.0 10 10 2.0 10 2.0 2.0 2.0 10 10 10 10 10 10 MAX 0.50 0.50 0.50 0.50 0.65 1.40 0.75 0.95 0.60 0. |
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Central Semiconductor Corp |
1.0 AMP RECTIFIER 200 THRU 1000 VOLTS |
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Motorola Semiconductor |
Central Processor Unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Programming Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Memory Space . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Central Semiconductor |
PNP SILICON QUAD TRANSISTOR 10V, IE=0, f=1.0MHz Cib VBE=2.0V, IC=0, f=1.0MHz ton VCC=30V, IC=150mA, IB1=15mA 30 toff VCC=6.0V, IC=150mA, IB1=IB2=15mA 150 MAX 50 50 0.4 1.6 1.3 2.6 8.0 30 hFE VCE=10V, IC=10mA hFE VCE=10V, IC=150mA hFE VCE=10V, IC=300mA MPQ2906 MIN MAX 35 |
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Central Semiconductor |
SILICON PN UNIJUNCTION TRANSISTORS |
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Central Semiconductor Corp |
SURFACE MOUNT NPN SILICON TRANSISTOR BVCEO IC=10mA (BCX55) 60 BVCEO IC=10mA (BCX56) 80 VCE(SAT) IC=500mA, IB=50mA VBE(ON) VCE=2.0V, IB=500mA hFE VCE=2.0V, IC=5.0mA 63 hFE VCE=2.0V, IC=150mA 63 hFE VCE=2.0V, IC=150mA (BCX54-10, BCX55-10, BCX56-10) 63 hFE VCE=2.0V, IC=150mA (BCX54-16, BC |
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Central Semiconductor |
(BC107x - BC109x) Small Signal Transistors |
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Central Semiconductor |
N-Channel MOSFET |
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Central Semiconductor |
PNP SILICON TRANSISTOR mA, f=200MHz 200 VCB=10V, IE=0, f=1.0MHz 8.0 Cob Cib VEB=2.0V, IC=0, f=1.0MHz 30 ton VCC=30V, IC=150mA, IB1=15mA 45 toff VCC=6.0V, IC=150mA, IB1=IB2=15mA 100 www.DataSheet.co.kr PN2906A PN2907A MIN MAX 10 50 60 60 5.0 0.4 1.6 1.3 2.6 200 8.0 30 45 1 |
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Central Semiconductor Corp |
COMPLEMENTARY SILICON POWER TRANSISTORS |
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Central Semiconductor |
N-Channel FET |
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Central Semiconductor |
NPN SILICON TRANSISTOR C109) 5.0 VCE(SAT) IC=10mA, IB=0.5mA VCE(SAT) IC=100mA, IB=5.0mA VBE(SAT) IC=10mA, IB=0.5mA VBE(SAT) IC=100mA, IB=5.0mA VBE(ON) VCE=5.0V, IC=2.0mA 0.55 VBE(ON) VCE=5.0V, IC=10mA hFE VCE=5.0V, IC=10μA (BC107B, BC108B, BC109B) 40 hFE VCE=5. |
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Central Semiconductor |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS YP ICBO VCB=Rated VCBO ICEO VCE=½Rated VCEO IEBO VEB=5.0V BVCEO IC=30mA (TIP140, TIP145) 60 BVCEO IC=30mA (TIP141, TIP146) 80 BVCEO IC=30mA (TIP142, TIP147) 100 VCE(SAT) IC=5.0A, IB=10mA VCE(SAT) IC=10A, IB=40mA VBE(ON) VCE=4.0V, I |
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CENTRAL SEMICONDUCTOR |
SILICON NPN TRANSISTORS 0V - - 50 - - 50 BVCBO BVCEO IC=100μA IC=1.0mA 160 - - 180 - 140 - - 160 - - BVEBO IE=10μA 6.0 - - 6.0 - - VCE(SAT) IC=10mA, IB=1.0mA - - 0.15 - - 0.15 VCE(SAT) VBE(SAT) IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA - - 0.25 - - 0.20 - |
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Central Semiconductor |
SURFACE MOUNT SILICON UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSORS • Low profile SMAFL surface mount package • Glass passivated junction • Low inductance • Flammability classification UL 94V-0 MAXIMUM RATINGS: (TA=25°C) Peak Power Dissipation (Note 1) Peak Forward Surge Current (JEDEC method) Operating and Storage |
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Central Semiconductor |
SILICON UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSORS |
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CENTRAL SEMICONDUCTOR |
COMPLEMENTARY SILICON POWER TRANSISTORS B=400mA VCE(SAT) IC=10A, IB=3.3A VBE(ON) VCE=4.0V, IC=4.0A hFE VCE=4.0V, IC=4.0A 20 hFE VCE=4.0V, IC=10A 5.0 hfe VCE=4.0V, IC=1.0A, f=1.0kHz 15 fT VCE=10V, IC=0.5A, f=1.0MHz 2.5 fhfe VCE=4.0V, IC=1.0A, f=1.0kHz 10 Is/b VCE=40V, t=1.0s |
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