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CYStech Electronics |
30V P-CHANNEL Enhancement Mode MOSFET • Ultra high speed switching. • Low gate charge. • 2.5V drive. • Pb-free lead plating and halogen-free package. BVDSS ID RDSON(typ) -30V -230mA 3Ω@-4V 4.6Ω@-2.5V 10.9Ω@-1.5V Equivalent Circuit MTP3LP01N3 Outline SOT-23 D G：Gate S：Source D：Drain |
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CYStech Electronics |
P-Channel Enhancement Mode MOSFET • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package BVDSS ID RDSON@VGS=-4.5V, ID=-15.3A RDSON@VGS=-2.5V, ID=-13.1A -20V -45A 8.8mΩ(typ) 12.8mΩ(typ) Equivalent Circuit MTP2611V8 Out |
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CYStech Electronics |
P-Channel Enhancement Mode Power MOSFET • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating package Equivalent Circuit MTP4435V8 Outline Pin 1 DFN3×3 G：Gate S：Source D：Drain Ordering Information Device MTP4435V8-0-T1-G Package DFN3×3 (Pb-free |
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CYStech Electronics |
P-Channel Enhancement Mode Power MOSFET • RDS(ON)=50mΩ@VGS=-10V, ID=-6.1A RDS(ON)=61mΩ@VGS=-4.5V, ID=-5A • Simple drive requirement • Low gate charge • Low voltage drive (2.5V) • Low on-resistance • Fast switching speed • Pb-free lead plating package Equivalent Circuit MTP4403Q8 Outline |
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CYStech |
20V P-Channel Enhancement Mode MOSFET • Advanced trench process technology • High density cell design for ultra low on resistance • Excellent thermal and electrical capabilities • Compact and low profile SOT-323 package • Pb-free lead plating and halogen-free package -20V -1.6A 75mΩ(typ |
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CYStech Electronics |
30V P-CHANNEL Enhancement Mode MOSFET • Single Drive Requirement • Low On-resistance, RDS(ON)=50mΩ(typ.)@VGS=-10V, ID=-3.2A RDS(ON)=72mΩ(typ.)@VGS=-4.5V, ID=-2.6A • Ultra High Speed Switching • Pb-free package Symbol MTP452M3 Outline SOT-89 G：Gate S：Source D：Drain G D D S Absolute M |
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CYStech Electronics |
P-Channel Enhancement Mode Power MOSFET • Simple Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating package BVDSS RDSON(MAX) ID -30V 55mΩ -6A Symbol MTP452L3 Outline SOT-223 D S G：Gate D：Drain S：Source D G Absolute Maximum Ratings (Ta=25°C) P |
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CYStech Electronics |
P-Channel Enhancement Mode Power MOSFET • Single Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating and halogen-free package BVDSS -30V ID RDS(ON)@VGS=-10V, ID=-10A RDS(ON)@VGS=-5V, ID=-7A -50A 10mΩ(typ) 14mΩ(typ) Symbol MTP425J3 Outline TO-252 |
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CYStech Electronics |
P-Channel Enhancement Mode Power MOSFET • Single Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating package BVDSS ID RDS(ON)@VGS=-10V, ID=-10A RDS(ON)@VGS=-5V, ID=-7A -30V -50A 10mΩ(typ) 14mΩ(typ) Symbol MTP425I3 Outline TO-251AB TO-251S G：Gat |
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CYStech Electronics |
30V P-CHANNEL Enhancement Mode MOSFET • Ultra high speed switching. • Low gate charge. • 2.5V drive. • Pb-free package lead plating and halogen-free package. BVDSS ID RDSON(typ) -30V -230mA 3Ω@-4V 4.6Ω@-2.5V 10.9Ω@-1.5V Equivalent Circuit MTP3LP01Y3 Outline SOT-723 D G：Gate S：Source |
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CYStech Electronics |
30V P-CHANNEL Enhancement Mode MOSFET • Ultra high speed switching. • Low gate charge. • 2.5V drive. • Pb-free package. BVDSS ID RDSON(typ) -30V -230mA 3Ω@-4V 4.6Ω@-2.5V 10.9Ω@-1.5V Equivalent Circuit MTP3LP01S3 Outline SOT-323 D G：Gate S：Source D：Drain G S Ordering Information D |
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CYStech Electronics |
-20V P-CHANNEL Enhancement Mode MOSFET -20V -350mA 0.64Ω(typ) 0.68Ω(typ) 1.1Ω(typ) 1.7Ω(typ) • Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th)<1.2V. • Compact industrial standard SOT-523 surface mount package. • Pb-free package. Equivalent Circu |
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CYStech Electronics |
50V P-CHANNEL Enhancement Mode MOSFET • Low gate charge • Excellent thermal and electrical capabilities • Pb-free lead plating and halogen-free package BVDSS ID RDSON@-10V RDSON@-5V RDSON@-4V [email protected] -50V -130mA 8Ω (MAX) 10Ω (MAX) 12Ω (MAX) 32Ω (MAX) Equivalent Circuit MTP3J15Y3 |
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CYStech Electronics |
50V P-CHANNEL Enhancement Mode MOSFET • Low gate charge • Excellent thermal and electrical capabilities • Pb-free package BVDSS ID RDSON@VGS=-10V, ID=-100mA RDSON@VGS=-5V, ID=-100mA -50V -130mA 4.5Ω(typ) 6Ω(typ) Equivalent Circuit MTP3J15N3 Outline SOT-23 D G：Gate S：Source D：Drain |
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CYStech Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating package Equivalent Circuit MTP2402Q8 Outline SOP-8 G：Gate S：Source D：Drain Ordering Information Device MTP2402Q8 Package SOP-8 (Pb-free lead plating pack |
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CYStech Electronics |
P-Channel Logic Level Enhancement Mode MOSFET • Single Drive Requirement • Low On-resistance, RDS(ON)=90.8mΩ@VGS=-10V, ID=-4A • Ultra High Speed Switching • Pb-free lead plated package BVDSS ID RDSON(MAX) -60V -4A 90.8mΩ Symbol MTP1406M3 Outline SOT-89 G：Gate S：Source D：Drain G D D S Abso |
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CYStech Electronics |
P-Channel Enhancement Mode Power MOSFET • Simple Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating package BVDSS ID RDSON@VGS=-10V, ID=-4A RDSON@VGS=-10V, ID=-1.5A RDSON@VGS=-4.5V, ID=-2A -60V -4.8A 75mΩ (typ.) 74mΩ (typ.) 99mΩ (typ.) Symbol MT |
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CYStech Electronics |
P-Channel MOSFET • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package BVDSS ID RDSON(MAX) -60V -10A 90.8mΩ Equivalent Circuit MTP1406J3 Outline TO-252AB TO-252AA G：Gate D：Drain S：Source G D S G D S Absolute Maximum Ratings (TC=25°C, un |
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CYStech Electronics |
-20V P-CHANNEL MOSFET • Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th)<1.2V. • Compact industrial standard SOT-523 surface mount package. • ESD protected gate • Pb-free lead plating and halogen-free package. Equivalent Circuit MT |
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CYStech Electronics |
P-Channel Enhancement Mode Power MOSFET • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free and Halogen-free package Equivalent Circuit MTP4463Q8 Outline SOP-8 G：Gate S：Source D：Drain MTP4463Q8 CYStek Product Specification CYStech Electronics Corp. Spec. |
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