| No. | Partie # | Fabricant | Description | Fiche Technique |
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CYStech |
20Amp. Schottky Barrier Rectifiers • Low VF and low IR type • Metal silicon junction, major carrier conduction • High current capability • Guardring for over voltage protection • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed : 260℃/10s |
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CYStech |
Schottky Barrier Rectifiers VF Low VF and low IR type Low power loss, high efficiency High junction temperature capability RoHS compliant package High current capability Pb-free lead plating High surge capability Good tradeoff between leakage current and |
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CYStech |
Schottky Barrier Rectifiers VF(typ.) 0.7V • 175℃ operating junction temperature • Low VF and low IR type • Metal silicon junction, major carrier conduction • Guardring for over voltage protection • Low power loss, high efficiency • High surge capability • For use in lo |
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CYStech Electronics |
Schottky Barrier Rectifiers • 175℃ operating junction temperature • Low VF and low IR type • Metal silicon junction, major carrier conduction • 10A total (5A per diode leg) • Guardring for over voltage protection • Low power loss, high efficiency • High surge capability • Insul |
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CYStech |
Schottky Barrier Rectifiers VF(typ.) 0.65V • 175℃ operating junction temperature • Low VF and low IR type • Metal silicon junction, major carrier conduction • Guardring for over voltage protection • Low power loss, high efficiency • High surge capability • For use in l |
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