No. | Partie # | Fabricant | Description | Fiche Technique |
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Cree |
Silicon Carbide Schottky Diode IF (TC=130˚C) = 50 A 110 nC Package • • • • • • • 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive |
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CREE |
Silicon Carbide Schottky Diode • 1.7kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • |
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CREE |
Silicon Carbide Schottky Diode • 1.7kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • |
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CREE |
Silicon Carbide Schottky Diode • 1.7kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • |
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