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Cree |
Silicon Carbide Schottky Diode Package IF (TC=135˚C) = 14 A Qc = 25 nC • • • • • • • 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switc |
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CREE |
Silicon Carbide Schottky Diode • 650-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits |
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Cree |
Silicon Carbide Schottky Diode Package IF (TC=125˚C) = 8 A Qc = 21 nC • • • • • • 650-Volt Schottky Rectifier Ceramic Package provides 2.5kV isolation Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temp |
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CREE |
Silicon Carbide Schottky Diode • 650-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits |
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CREE |
Silicon Carbide Schottky Diode Package VRRM = 650 V IF (TC=135˚C) = 16 A Qc = 34 nC • 650 Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior |
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Cree |
Silicon Carbide Schottky Diode VRRM = 650 V IF(AVG) = 6 A Qc = 16 nC Package • • • • • • • 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switc |
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Cree |
Silicon Carbide Schottky Diode Package VRRM = 600 V IF (TC=135˚C) = 6 A Qc = 10 nC • 600-Volt Schottky Rectifier • Optimized for PFC Boost Diode Application • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • |
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Cree |
Silicon Carbide Schottky Diode Package IF (TC=135˚C) = 7.5 A Qc = 8.5 nC • • • • • • • • 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Indep |
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CREE |
Silicon Carbide Schottky Diode • 600-Volt Schottky Rectifier • Optimized for PFC Boost Diode Application • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on |
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CREE |
Silicon Carbide Schottky Diode • 650-Volt Schottky Rectifier • Optimized for PFC Boost Diode Application • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Pos |
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CREE |
Silicon Carbide Schottky Diode • 650-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits |
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CREE |
Silicon Carbide Schottky Diode • 650-Volt Schottky Rectifier • Ceramic Package Provides 2.5kV Isolation • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • Positive Temperature Coefficient on VF Benefits • Electrically |
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CREE |
Silicon Carbide Schottky Diode • 650-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits |
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CREE |
Silicon Carbide Schottky Diode Package • 650-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF |
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Cree |
Silicon Carbide Schottky Diode VRRM = IF; TC<135˚C 1700 V = 14.4 A 96 nC Qc = Package • • • • • • • 1700-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Ext |
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Cree |
Silicon Carbide Schottky Diode Package IF (TC=135˚C) = 4 A Qc = 4.8 nC • • • • • • • • 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independe |
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Cree |
Silicon Carbide Schottky Diode Package IF (TC=135˚C) = 4 A Qc = 4.8 nC • • • • • • • • 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independe |
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Cree |
Silicon Carbide Schottky Diode Package IF (TC=128˚C) = 2 A Qc = 4.8 nC • • • • • • • • • 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Ind |
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Cree |
Silicon Carbide Schottky Diode Package IF (TC=135˚C) = 5.5 A Qc = 6.7 nC • • • • • • • • 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Indepen |
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Cree |
Silicon Carbide Schottky Diode Package IF (TC=135˚C) = 5.5 A Qc = 6.7 nC • • • • • • • • 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Indepen |
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