CHONGQING PINGYANG 75N fiche technique

No.	Partie #	Fabricant	Description
1	75N08	CHONGQING PINGYANG	N-CHANNEL MOSFET  75A,80V,RDS(ON)=17mΩ@VGS=10V/35A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 75N08 ITO-220AB 75N08F TO-263 75N08B TO-262 75N08H Absolute Maximum Ratings(TC=25℃,unless otherwise no
2	75N08H	CHONGQING PINGYANG	N-CHANNEL MOSFET  75A,80V,RDS(ON)=17mΩ@VGS=10V/35A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 75N08 ITO-220AB 75N08F TO-263 75N08B TO-262 75N08H Absolute Maximum Ratings(TC=25℃,unless otherwise no
3	75N08F	CHONGQING PINGYANG	N-CHANNEL MOSFET  75A,80V,RDS(ON)=17mΩ@VGS=10V/35A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 75N08 ITO-220AB 75N08F TO-263 75N08B TO-262 75N08H Absolute Maximum Ratings(TC=25℃,unless otherwise no
4	75N08B	CHONGQING PINGYANG	N-CHANNEL MOSFET  75A,80V,RDS(ON)=17mΩ@VGS=10V/35A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 75N08 ITO-220AB 75N08F TO-263 75N08B TO-262 75N08H Absolute Maximum Ratings(TC=25℃,unless otherwise no