| No. | Partie # | Fabricant | Description | Fiche Technique |
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CHINA BASE |
PNP Silicon Epitaxial Planar Transistor V -VCEO 50 V -VEBO 3 V -IC 100 mA -ICM 200 mA Ptot 200 mW Tj 150 OC TS - 55 to + 150 OC Symbol hFE hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(on) fT Ccb Min. 250 250 250 50 50 3 40 - Max. 800 50 50 - 0. |
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CHINA BASE |
NPN Silicon Epitaxial Planar Medium Power Transistor |
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CHINA BASE |
Silicon Epitaxial Planar Switching Diode • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applications • Ultra high speed switching application 3 12 Marking Code: 5D SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Revers |
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CHINA BASE |
NPN Silicon Epitaxial Planar Medium Power Transistor |
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CHINA BASE |
NPN General Purpose Amplifier |
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