No. | Partie # | Fabricant | Description | Fiche Technique |
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PHOTO DIODE • SMALL DARK CURRENT: ID = 5 nA • SMALL TERMINAL CAPACITANCE: CT = 0.35 pF at 0.9 VBR • HIGH QUANTUM EFFICIENCY: η = 90% at λ = 1310 nm, M = 1 η = 77% at λ = 1550 nm, M = 1 • HIGH SPEED RESPONSE: fc = 2.5 GHz at M = 10 • DETECTING AREA SIZE: φ30 μm • |
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InGaAs APD IN COAXIAL PACKAGE • SMALL DARK CURRENT: ID = 7 nA • HIGH SENSITIVITY: S = 0.94 A/W at λ = 1310 nm, M = 1 S = 0.96 A/W at λ = 1550 nm, M = 1 • HIGH SPEED RESPONSE: fC = 1.5 GHz at M = 10 • COAXIAL MODULE WITH SMF or GI-50 FIBER • WITH SC CONNECTOR: Standard FC CONNECTO |
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InGaAs APD • SMALL DARK CURRENT: ID = 7 nA • HIGH SENSITIVITY: S = 0.94 A/W at λ = 1310 nm, M = 1 S = 0.96 A/W at λ = 1550 nm, M = 1 • HIGH SPEED RESPONSE: fC = 2.5 GHz at M = 5 • COAXIAL MODULE WITH SINGLE MODE FIBER (SMF) or GI-50 Fiber • WITH SC CONNECTOR: S |
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