| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
CEL |
NPN SILICON RF TRANSISTOR • Low distortion, low voltage: IM2 = 55 dBc TYP., IM3 = 76 dBc TYP. @ VCE = 5 V, IC = 50 mA, VO = 105 dBV/75 • Large Ptot : Ptot = 1.8 W (Mounted on double-sided copper-clad 16 cm 0.7 mm (t) ceramic substrate) 2 • Small package : 3-pin power min |
|
|
|
|
CEL |
X to Ku BAND SUPER LOW NOISE AMPLIFIER • Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP. Ga = 13.0 dB TYP. @f = 12 GHz • Gate Length: Lg ≤ 0.20 µm • Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number Marking NE4210S01-T1 L NE4210S01-T1B Supplying Form T |
|