No. | Partie # | Fabricant | Description | Fiche Technique |
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CDIL |
NPN PLASTIC POWER TRANSISTORS ºC/W 275 ºC ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter sustaining voltage **VCEO(sus) IC=10mA, IB=0 MJE13006 MJE13007 Collector Cut Off Current ICEV VCEV=Rated Value,V |
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CDIL |
PNP EPITAXIAL SILICON POWER TRANSISTOR |
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CDIL |
PNP PLASTIC POWER TRANSISTORS |
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CDIL |
PNP PLASTIC POWER TRANSISTORS |
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CDIL |
NPN PLASTIC POWER TRANSISTORS |
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CDIL |
NPN PLASTIC POWER TRANSISTORS |
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CDIL |
PNP PLASTIC POWER TRANSISTORS |
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CDIL |
SILICON EPITAXIAL POWER TRANSISTORS |
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CDIL |
PNP PLASTIC POWER TRANSISTORS |
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CDIL |
(MJE13002 / MJE13003) NPN EPITAXIAL SILICON POWER TRANSISTORS **VCEO(sus) IC=10mA, IB=0 MJE13002 MJE13003 VCEV=Rated Value, VBE(off)=1.5V VCEV=Rated Value, VBE(off)=1.5V,Tc=100ºC VEB=9V, IC=0 SYMBOL VCEO(sus) VCEV VEBO IC *ICM IB *IBM IE *IEM PD PD Tj, Tstg MJE13002 300 600 9.0 1.5 3.0 0.75 1.5 2.25 4.5 1.4 11 |
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CDIL |
(MJE13002 / MJE13003) NPN EPITAXIAL SILICON POWER TRANSISTORS **VCEO(sus) IC=10mA, IB=0 MJE13002 MJE13003 VCEV=Rated Value, VBE(off)=1.5V VCEV=Rated Value, VBE(off)=1.5V,Tc=100ºC VEB=9V, IC=0 SYMBOL VCEO(sus) VCEV VEBO IC *ICM IB *IBM IE *IEM PD PD Tj, Tstg MJE13002 300 600 9.0 1.5 3.0 0.75 1.5 2.25 4.5 1.4 11 |
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CDIL |
NPN PLASTIC POWER TRANSISTORS |
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CDIL |
NPN PLASTIC POWER TRANSISTORS |
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CDIL |
NPN PLASTIC POWER TRANSISTORS |
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CDIL |
PNP PLASTIC POWER TRANSISTORS |
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CDIL |
SILICON EPITAXIAL POWER TRANSISTORS |
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CDIL |
NPN EPITAXIAL SILICON POWER TRANSISTOR |
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CDIL |
PNP PLASTIC POWER TRANSISTORS |
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CDIL |
NPN PLASTIC POWER TRANSISTORS |
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CDIL |
NPN PLASTIC POWER TRANSISTORS |
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