| No. | Partie # | Fabricant | Description | Fiche Technique |
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CDIL |
NPN Silicon Transistor or Emitter Voltage* VCBO IC=100µA.IE=0 Collector Base Voltage >250 Emitter Base Voltage Collector Cut off Current Emitter Cut off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage VEBO ICBO IEBO hFE VCE(sat) |
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CDIL |
NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS E * VCB=20V,IE=0 Ta =150 ºC VEB=4V, IC=0 VCE=10V,IC=1mA IC=1mA,VCE=10V 0.65 67 200 110 35 65 40 Max 500 4.0 500 0.74 221 500 215 125 135 85 UNITS nA µA nA V Continental Device India Limited Data Sheet Page 1 of 4 www.DataSheet4U.com NPN SILICON |
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CDIL |
NPN Silicon Transistor or Emitter Voltage* VCBO IC=100µA.IE=0 Collector Base Voltage >250 Emitter Base Voltage Collector Cut off Current Emitter Cut off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage VEBO ICBO IEBO hFE VCE(sat) |
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CDIL |
NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS E * VCB=20V,IE=0 Ta =150 ºC VEB=4V, IC=0 VCE=10V,IC=1mA IC=1mA,VCE=10V 0.65 67 200 110 35 65 40 Max 500 4.0 500 0.74 221 500 215 125 135 85 UNITS nA µA nA V Continental Device India Limited Data Sheet Page 1 of 4 www.DataSheet4U.com NPN SILICON |
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CDIL |
(BF494 / BF495) NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS FE * VCB=20V,IE=0 Ta =150 ºC VEB=4V, IC=0 VCE=10V,IC=1mA IC=1mA,VCE=10V 0.65 67 200 110 35 65 40 Max 500 4.0 500 0.74 221 500 215 125 135 85 UNITS nA µA nA V Continental Device India Limited Data Sheet Page 1 of 4 NPN SILICON PLANAR EPITAXIAL R |
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CDIL |
PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS |
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CDIL |
PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS |
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