Bourns TIP fiche technique

No.	Partie #	Fabricant	Description
1	TIP35C	BOURNS	NPN SILICON POWER TRANSISTORS
2	TIP141	Bourns Electronic	NPN SILICON POWER DARLINGTONS Tstg TL VCEO V CBO SYMBOL VALUE 60 80 100 60 80 100 5 10 15 0.5 125 3.5 100 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of
3	TIP142	Bourns Electronic	NPN SILICON POWER DARLINGTONS Tstg TL VCEO V CBO SYMBOL VALUE 60 80 100 60 80 100 5 10 15 0.5 125 3.5 100 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of
4	TIP122	Bourns	NPN SILICON POWER DARLINGTONS
5	TIP35A	BOURNS	NPN SILICON POWER TRANSISTORS
6	TIP41	BOURNS	NPN SILICON POWER TRANSISTORS 41B TIP41C VCBO VCEO VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL 80 100 120 140 40 60 80 100 5 6 10 3 65 2 62.5 -65 to +150 -65 to +150 250 V V V A A A W W mJ °C °C °C NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linear
7	TIP41A	BOURNS	NPN SILICON POWER TRANSISTORS 41B TIP41C VCBO VCEO VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL 80 100 120 140 40 60 80 100 5 6 10 3 65 2 62.5 -65 to +150 -65 to +150 250 V V V A A A W W mJ °C °C °C NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linear
8	TIP41B	BOURNS	NPN SILICON POWER TRANSISTORS 41B TIP41C VCBO VCEO VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL 80 100 120 140 40 60 80 100 5 6 10 3 65 2 62.5 -65 to +150 -65 to +150 250 V V V A A A W W mJ °C °C °C NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linear
9	TIP33C	BOURNS	NPN SILICON POWER TRANSISTORS
10	TIP35B	BOURNS	NPN SILICON POWER TRANSISTORS
11	TIP35	BOURNS	NPN SILICON POWER TRANSISTORS
12	TIP140	Bourns Electronic	NPN SILICON POWER DARLINGTONS Tstg TL VCEO V CBO SYMBOL VALUE 60 80 100 60 80 100 5 10 15 0.5 125 3.5 100 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of
13	TIP31B	Bourns	NPN SILICON POWER TRANSISTORS
14	TIP105	Bourns	PNP SILICON POWER DARLINGTONS
15	TIP106	Bourns	PNP SILICON POWER DARLINGTONS
16	TIP33A	BOURNS	NPN SILICON POWER TRANSISTORS
17	TIP31	Bourns	NPN SILICON POWER TRANSISTORS
18	TIP29	Bourns	NPN SILICON POWER TRANSISTORS
19	TIPP117	BOURNS	PNP SILICON POWER DARLINGTONS PT Tj Tstg TL VALUE -60 -80 -100 -60 -80 -100 -5 -2 -4 -50 0.8 20 -55 to +150 -55 to +150 260 UNIT V V V A A mA W W °C °C °C PRODUCT INFORMATION MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIPP115,
20	TIP120	Bourns	NPN SILICON POWER DARLINGTONS