Bourns Electronic Solutions BU fiche technique

No.	Partie #	Fabricant	Description
1	BUX84	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTOR BUX84 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES IEBO hFE VCE(sat) VBE(sat) ft Cob NOTES: 2. 3. 4. 5. Collector-emitter sustaining voltage Collector-emitter cut-o
2	BU48A	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS A A A A W °C °C PRODUCT DataSheet 4 U .com INFORMATION 1 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BUV48, BUV48A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°
3	BUX85	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTOR X85 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES IEBO hFE VCE(sat) VBE(sat) ft Cob NOTES: 2. 3. 4. 5. Collector-emitter sustaining voltage Collector-emitter cut-off
4	CAY17	Bourns Electronic Solutions	Bussed Resistor Array ■ ■ ■ ■ JA version available to 100K ohms 10 pin with 8 resistors in bussed type for pull up/down circuit Lead free version available (see How to Order “Termination” options) RoHS compliant* ■ ■ ■ ■ ■ Convex termination style Resistance tolerance
5	BU406	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS PTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BU406, BU407 NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO Collector-emitter break
6	BU426A	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS EPTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BU426, BU426A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) Collector-emitter su
7	BU47	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS ON 1 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BUV47, BUV47A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V
8	BU47A	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS ON 1 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BUV47, BUV47A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V
9	BU48	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS A A A A W °C °C PRODUCT DataSheet 4 U .com INFORMATION 1 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BUV48, BUV48A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°
10	BUL770	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTOR for tp = 300 µs, duty cycle ≤ 2%. SYMBOL VCES VCBO V CEO VEBO IC ICM ICM IB IBM Ptot Tj Tstg VALUE 700 700 400 9 2.5 6 8 1.5 2.5 50 -65 to +150 -65 to +150 UNIT V V V V A A A A A W °C °C PRODUCT DataSheet 4 U .com INFORMATION 1 JULY 1991 - REVISED
11	BUL791	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTOR for tp = 300 µs, duty cycle ≤ 2%. SYMBOL VCES VCBO V CEO VEBO IC ICM ICM IB IBM Ptot Tj Tstg VALUE 700 700 400 9 4 8 14 2.5 3.5 75 -65 to +150 -65 to +150 UNIT V V V V A A A A A W °C °C PRODUCT DataSheet 4 U .com INFORMATION 1 JULY 1991 - REVISED
12	BUT11	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTOR aSheet4U.com BUT11 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES IEBO hFE VCE(sat) VBE(sat) ft Cob Collector-emitter sustaining voltage Collector-emitter cut-off cu
13	BUV47	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS ON 1 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BUV47, BUV47A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V
14	BU407	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS PTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BU406, BU407 NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO Collector-emitter break
15	BU426	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS EPTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BU426, BU426A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) Collector-emitter su
16	BUV47A	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS ON 1 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BUV47, BUV47A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V