Bourns BDX fiche technique

No.	Partie #	Fabricant	Description
1	BDX34	Bourns Electronic Solutions	PNP Transistor W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot TJ Tstg TA VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -10 -0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C
2	BDX53A	Bourns	NPN SILICON POWER DARLINGTONS rly to 150°C free air temperature at the rate of 16 mW/°C. SYMBOL VCBO VCEO VEBO IC IB Ptot Ptot Tj Tstg TA VALUE 45 60 80 100 45 60 80 100 5 8 0.2 60 2 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A A W W °C °C °C PRODUCT INFORMATION MAY 1989
3	BDX33C	Bourns	NPN Transistor of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. SYMBOL VCBO VCEO VEBO IC IB Ptot Ptot TJ Tstg TA VALUE 45 60 80 100 120 45 60 80 100 120 5 10 0.3 70 2 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A A W W °
4	BDX33	Bourns Electronic Solutions	NPN Transistor W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot TJ Tstg TA VCEO V CBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 10 0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT
5	BDX53	Bourns Electronic Solutions	NPN SILICON POWER DARLINGTONS 50°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 8 0.2 60 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT DataSheet 4 U .com INFORMATION
6	BDX53B	Bourns	NPN SILICON POWER DARLINGTONS rly to 150°C free air temperature at the rate of 16 mW/°C. SYMBOL VCBO VCEO VEBO IC IB Ptot Ptot Tj Tstg TA VALUE 45 60 80 100 45 60 80 100 5 8 0.2 60 2 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A A W W °C °C °C PRODUCT INFORMATION MAY 1989
7	BDX34B	Bourns	PNP Transistor of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. SYMBOL VCBO VCEO VEBO IC IB Ptot Ptot TJ Tstg TA VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -10 -0.3 70 2 -65 to +150 -65 to +150 -65 to +150 UNIT V
8	BDX34C	Bourns	PNP Transistor of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. SYMBOL VCBO VCEO VEBO IC IB Ptot Ptot TJ Tstg TA VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -10 -0.3 70 2 -65 to +150 -65 to +150 -65 to +150 UNIT V
9	BDX34D	Bourns	PNP Transistor of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. SYMBOL VCBO VCEO VEBO IC IB Ptot Ptot TJ Tstg TA VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -10 -0.3 70 2 -65 to +150 -65 to +150 -65 to +150 UNIT V
10	BDX34A	Bourns	PNP Transistor of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. SYMBOL VCBO VCEO VEBO IC IB Ptot Ptot TJ Tstg TA VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -10 -0.3 70 2 -65 to +150 -65 to +150 -65 to +150 UNIT V
11	BDX33D	Bourns	NPN Transistor of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. SYMBOL VCBO VCEO VEBO IC IB Ptot Ptot TJ Tstg TA VALUE 45 60 80 100 120 45 60 80 100 120 5 10 0.3 70 2 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A A W W °
12	BDX33B	Bourns	NPN Transistor of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. SYMBOL VCBO VCEO VEBO IC IB Ptot Ptot TJ Tstg TA VALUE 45 60 80 100 120 45 60 80 100 120 5 10 0.3 70 2 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A A W W °
13	BDX33A	Bourns	NPN Transistor of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. SYMBOL VCBO VCEO VEBO IC IB Ptot Ptot TJ Tstg TA VALUE 45 60 80 100 120 45 60 80 100 120 5 10 0.3 70 2 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A A W W °
14	BDX53C	Bourns	NPN SILICON POWER DARLINGTONS rly to 150°C free air temperature at the rate of 16 mW/°C. SYMBOL VCBO VCEO VEBO IC IB Ptot Ptot Tj Tstg TA VALUE 45 60 80 100 45 60 80 100 5 8 0.2 60 2 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A A W W °C °C °C PRODUCT INFORMATION MAY 1989
15	BDX54	Bourns Electronic Solutions	PNP SILICON POWER DARLINGTONS 50°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -8 -0.2 60 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT DataSheet 4 U .com