Bourns BD2 fiche technique

No.	Partie #	Fabricant	Description
1	BD243C	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS m from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL V CEO VCER SYMBOL VALUE 55 70 90 115 45 60 80 100 5 6 10 3 65 2 62.5 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3
2	BD243	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS m from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL V CEO VCER SYMBOL VALUE 55 70 90 115 45 60 80 100 5 6 10 3 65 2 62.5 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3
3	BD240A	Bourns	PNP SILICON POWER TRANSISTORS D240C BD240 BD240A BD240B BD240C VCER VCEO VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL -55 -70 V -90 -115 -45 -60 V -80 -100 -5 V -2 A -4 A -0.6 A 30 W 2 W 32 mJ -65 to +150 °C -65 to +150 °C 250 °C NOTES: 1. This value appl
4	BD241C	Bourns	NPN SILICON POWER TRANSISTORS 241C BD241 BD241A BD241B BD241C VCER VCEO VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL 55 70 V 90 115 45 60 V 80 100 5 V 3 A 5 A 1 A 40 W 2 W 32 mJ -65 to +150 °C -65 to +150 °C 250 °C NOTES: 1. This value applies for tp ≤ 0.
5	BD243B	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS m from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL V CEO VCER SYMBOL VALUE 55 70 90 115 45 60 80 100 5 6 10 3 65 2 62.5 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3
6	BD242	Bourns Electronic	PNP SILICON POWER TRANSISTORS m from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL V CEO VCER SYMBOL VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -3 -5 -1 40 2 32 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for
7	BD240	Bourns	PNP SILICON POWER TRANSISTORS D240C BD240 BD240A BD240B BD240C VCER VCEO VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL -55 -70 V -90 -115 -45 -60 V -80 -100 -5 V -2 A -4 A -0.6 A 30 W 2 W 32 mJ -65 to +150 °C -65 to +150 °C 250 °C NOTES: 1. This value appl
8	BD240B	Bourns	PNP SILICON POWER TRANSISTORS D240C BD240 BD240A BD240B BD240C VCER VCEO VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL -55 -70 V -90 -115 -45 -60 V -80 -100 -5 V -2 A -4 A -0.6 A 30 W 2 W 32 mJ -65 to +150 °C -65 to +150 °C 250 °C NOTES: 1. This value appl
9	BD241	Bourns	NPN SILICON POWER TRANSISTORS 241C BD241 BD241A BD241B BD241C VCER VCEO VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL 55 70 V 90 115 45 60 V 80 100 5 V 3 A 5 A 1 A 40 W 2 W 32 mJ -65 to +150 °C -65 to +150 °C 250 °C NOTES: 1. This value applies for tp ≤ 0.
10	BD241A	Bourns	NPN SILICON POWER TRANSISTORS 241C BD241 BD241A BD241B BD241C VCER VCEO VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL 55 70 V 90 115 45 60 V 80 100 5 V 3 A 5 A 1 A 40 W 2 W 32 mJ -65 to +150 °C -65 to +150 °C 250 °C NOTES: 1. This value applies for tp ≤ 0.
11	BD243A	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS m from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL V CEO VCER SYMBOL VALUE 55 70 90 115 45 60 80 100 5 6 10 3 65 2 62.5 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3
12	BD242B	Bourns Electronic	PNP SILICON POWER TRANSISTORS m from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL V CEO VCER SYMBOL VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -3 -5 -1 40 2 32 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for
13	BD242C	Bourns Electronic	PNP SILICON POWER TRANSISTORS m from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL V CEO VCER SYMBOL VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -3 -5 -1 40 2 32 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for
14	BD240C	Bourns	PNP SILICON POWER TRANSISTORS D240C BD240 BD240A BD240B BD240C VCER VCEO VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL -55 -70 V -90 -115 -45 -60 V -80 -100 -5 V -2 A -4 A -0.6 A 30 W 2 W 32 mJ -65 to +150 °C -65 to +150 °C 250 °C NOTES: 1. This value appl
15	BD241B	Bourns	NPN SILICON POWER TRANSISTORS 241C BD241 BD241A BD241B BD241C VCER VCEO VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL 55 70 V 90 115 45 60 V 80 100 5 V 3 A 5 A 1 A 40 W 2 W 32 mJ -65 to +150 °C -65 to +150 °C 250 °C NOTES: 1. This value applies for tp ≤ 0.
16	BD239C	Bourns	NPN SILICON POWER TRANSISTORS 239C BD239 BD239A BD239B BD239C VCER VCEO VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL 55 70 V 90 115 45 60 V 80 100 5 V 2 A 4 A 0.6 A 30 W 2 W 32 mJ -65 to +150 °C -65 to +150 °C 250 °C NOTES: 1. This value applies for tp ≤
17	BD239	Bourns	NPN SILICON POWER TRANSISTORS 239C BD239 BD239A BD239B BD239C VCER VCEO VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL 55 70 V 90 115 45 60 V 80 100 5 V 2 A 4 A 0.6 A 30 W 2 W 32 mJ -65 to +150 °C -65 to +150 °C 250 °C NOTES: 1. This value applies for tp ≤
18	BD239A	Bourns	NPN SILICON POWER TRANSISTORS 239C BD239 BD239A BD239B BD239C VCER VCEO VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL 55 70 V 90 115 45 60 V 80 100 5 V 2 A 4 A 0.6 A 30 W 2 W 32 mJ -65 to +150 °C -65 to +150 °C 250 °C NOTES: 1. This value applies for tp ≤
19	BD239B	Bourns	NPN SILICON POWER TRANSISTORS 239C BD239 BD239A BD239B BD239C VCER VCEO VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL 55 70 V 90 115 45 60 V 80 100 5 V 2 A 4 A 0.6 A 30 W 2 W 32 mJ -65 to +150 °C -65 to +150 °C 250 °C NOTES: 1. This value applies for tp ≤
20	BD242A	Bourns Electronic	PNP SILICON POWER TRANSISTORS m from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL V CEO VCER SYMBOL VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -3 -5 -1 40 2 32 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for