No. | Partie # | Fabricant | Description | Fiche Technique |
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BOURNS |
NPN SILICON POWER TRANSISTORS |
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Bourns Electronic |
NPN SILICON POWER DARLINGTONS Tstg TL VCEO V CBO SYMBOL VALUE 60 80 100 60 80 100 5 10 15 0.5 125 3.5 100 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of |
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Bourns Electronic |
NPN SILICON POWER DARLINGTONS Tstg TL VCEO V CBO SYMBOL VALUE 60 80 100 60 80 100 5 10 15 0.5 125 3.5 100 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of |
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Bourns |
NPN SILICON POWER DARLINGTONS |
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BOURNS |
NPN SILICON POWER TRANSISTORS |
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BOURNS |
NPN SILICON POWER TRANSISTORS 41B TIP41C VCBO VCEO VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL 80 100 120 140 40 60 80 100 5 6 10 3 65 2 62.5 -65 to +150 -65 to +150 250 V V V A A A W W mJ °C °C °C NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linear |
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BOURNS |
NPN SILICON POWER TRANSISTORS 41B TIP41C VCBO VCEO VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL 80 100 120 140 40 60 80 100 5 6 10 3 65 2 62.5 -65 to +150 -65 to +150 250 V V V A A A W W mJ °C °C °C NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linear |
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BOURNS |
NPN SILICON POWER TRANSISTORS 41B TIP41C VCBO VCEO VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL 80 100 120 140 40 60 80 100 5 6 10 3 65 2 62.5 -65 to +150 -65 to +150 250 V V V A A A W W mJ °C °C °C NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linear |
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BOURNS |
NPN SILICON POWER TRANSISTORS |
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BOURNS |
NPN SILICON POWER TRANSISTORS |
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BOURNS |
NPN SILICON POWER TRANSISTORS |
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Bourns Electronic |
NPN SILICON POWER DARLINGTONS Tstg TL VCEO V CBO SYMBOL VALUE 60 80 100 60 80 100 5 10 15 0.5 125 3.5 100 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of |
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Bourns |
NPN SILICON POWER TRANSISTORS |
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Bourns |
PNP SILICON POWER DARLINGTONS |
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Bourns |
PNP SILICON POWER DARLINGTONS |
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BOURNS |
NPN SILICON POWER TRANSISTORS |
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Bourns |
NPN SILICON POWER TRANSISTORS |
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Bourns |
NPN SILICON POWER TRANSISTORS |
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BOURNS |
PNP SILICON POWER DARLINGTONS PT Tj Tstg TL VALUE -60 -80 -100 -60 -80 -100 -5 -2 -4 -50 0.8 20 -55 to +150 -55 to +150 260 UNIT V V V A A mA W W °C °C °C PRODUCT INFORMATION MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIPP115, |
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Bourns |
NPN SILICON POWER DARLINGTONS |
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