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NPN Transistor 50°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE 60 80 100 120 60 80 100 120 5 4 0.1 50 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT DataSheet 4 U .com INFORMATI |
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NPN SILICON POWER TRANSISTORS m from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL V CEO VCER SYMBOL VALUE 55 70 90 115 45 60 80 100 5 6 10 3 65 2 62.5 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 |
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Bourns Electronic Solutions |
HIGH VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS systems such as LANs, and allows a float voltage of Terminals T and R correspond to the 500 V without clipping. IEC 60950 and UL 1950 have certain requirealternative line designators of A and B ments for incoming lines of telephone network voltage (T |
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FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR igned to limit overvoltages on the telephone and data lines. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection an |
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PNP Transistor y to 150°C free air temperature at the rate of 16 mW/°C. SYMBOL VCBO VCEO VEBO IC IB Ptot Ptot Tj Tstg TA VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -6 -0.2 50 2 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A A W W °C °C °C PRODUCT INFORMATION |
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NPN SILICON POWER TRANSISTORS |
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BOURNS |
NPN SILICON POWER TRANSISTORS |
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Bourns Electronic Solutions |
PNP Transistor °C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -6 -0.2 50 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT DataSheet 4 U .com IN |
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Bourns Electronic Solutions |
PNP Transistor W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot TJ Tstg TA VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -10 -0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C |
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Bourns |
FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR igned to limit overvoltages on the telephone and data lines. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection an |
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Bourns |
PNP Transistor y to 150°C free air temperature at the rate of 16 mW/°C. SYMBOL VCBO VCEO VEBO IC IB Ptot Ptot Tj Tstg TA VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -6 -0.2 50 2 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A A W W °C °C °C PRODUCT INFORMATION |
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PNP Transistor y to 150°C free air temperature at the rate of 16 mW/°C. SYMBOL VCBO VCEO VEBO IC IB Ptot Ptot Tj Tstg TA VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -6 -0.2 50 2 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A A W W °C °C °C PRODUCT INFORMATION |
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NPN Transistor of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. SYMBOL VCBO VCEO VEBO IC IB Ptot Ptot TJ Tstg TA VALUE 45 60 80 100 120 45 60 80 100 120 5 10 0.3 70 2 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A A W W ° |
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Thick Film Chip Resistor n RoHS compliant* n Tight tolerance of bottom electrode width n 1 % and 5 % tolerance options n Three layer termination process with nickel barrier helps prevent leaching and provides excellent solderability n Tape and reel packaging CR Series - Thi |
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Metal Oxide Varistor ■ High voltage rating ■ High current rating ■ Bidirectional ■ Surge protection ■ Fast response time ■ RoHS compliant* ■ Agency listing: Additional Information Click these links for more information: PRODUCT TECHNICAL INVENTORY SAMPLES CONTACT SELECT |
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Sulfur-Resistant Thick Film Chip Arrays ■ RoHS compliant* ■ Convex termination style ■ 2 isolated elements in an 02 package width ■ Resistance tolerance: ±5 % ■ Resistance range: 10 ohms to 1 megohm & zero-ohm jumper ■ Sulfur-resistant design CAY06-AS Series - Sulfur-Resistant Thick Film C |
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Bourns Electronic Solutions |
NPN Transistor W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot TJ Tstg TA VCEO V CBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 10 0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT |
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Bourns Electronic Solutions |
NPN SILICON POWER TRANSISTOR BUX84 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES IEBO hFE VCE(sat) VBE(sat) ft Cob NOTES: 2. 3. 4. 5. Collector-emitter sustaining voltage Collector-emitter cut-o |
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Bourns Electronic Solutions |
Chip Resistor Array n RoHS compliant* n 2/4 isolated resistors in an 0404/0804 size package n E24 series from 10 ohms to 1 megohm n Convex termination style n Resistance tolerance ±5 % n Suitable for all types of soldering processes n Paper tape on reel for a |
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Bourns Electronic Solutions |
Chip Resistor Arrays ■ RoHS compliant* ■ Convex and concave terminals ■ 2, 4 or 8 isolated elements available ■ Resistance tolerance ±1 % and ±5 % ■ Resistance range: 10 ohms to 1 megohm CAT/CAY 16 Series - Chip Resistor Arrays Specifications Requirement Short Time Over |
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