| No. | Partie # | Fabricant | Description | Fiche Technique |
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BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 9.5 A ID(Tc=100℃) 5.7 A IDM 38 A VGSS ±20 V EAS 700 mJ EAR 15.6 mJ IAR 9.5 A RθJC 2.5 ℃/W RθJA 62.5 ℃/W |
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BLUE ROCKET ELECTRONICS |
N-Channel MOSFET Low gate charge，Low Crss，Fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 650 V ID(Tc=25℃) 12 A ID(Tc=100℃) 7.6 A IDM 48 A VGSS ±30 V EAS 880 mJ EAR 25 mJ IAR 12 A RθJC 2.45 ℃/W RθJA 62.5 ℃/W PD |
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BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 12 A ID(Tc=100℃) 7.4 A IDM 48 A VGSS ±30 V EAS 870 mJ EAR 22.5 mJ IAR 12 A PD(Tc=25℃) 225 W TJ,TSTG -55 |
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BLUE ROCKET ELECTRONICS |
P-CHANNEL MOSFET Super high dense cell design for low R ，DS(on) Rugged and reliable，surface mount package，ESD protected. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDS ID(Tc=25℃) ID(Tc=70℃) IDM VGS EAS PD(Tc=25℃) PD(Tc=70℃) TJ,TSTG -60 -18 -14.5 |
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