| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
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NXP Semiconductors |
UHF power LDMOS transistor and benefits Excellent ruggedness Optimum thermal behavior and reliability, Rth(j-c) = 0.22 K/W High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Internal input matching for high gain and optimum broadb |
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Ampleon |
Power LDMOS transistor |
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Ampleon |
Power LDMOS transistor |
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NXP Semiconductors |
UHF power LDMOS transistor and benefits Excellent ruggedness Optimum thermal behavior and reliability, Rth(j-c) = 0.22 K/W High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Internal input matching for high gain and optimum broadb |
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