| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon Technologies AG |
PNP Silicon Digital Transistor min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 fT Ccb 50 70 0.5 1 70 0.9 - 100 |
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