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Philips |
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BLUE ROCKET ELECTRONICS |
Schottky Diode ，，。 Low forward voltage drop,low power losses,High efficiency operation. / Applications 、、，，。 For use in low voltage,high frequency inverters,free wheeling,and polarity protection applications. / Equivalent Circuit / Pinning 12 3 4 PIN1：An |
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Micro Commercial Components |
Schottky Barrier Rectifier • Guard Ring For Transient Protection • Low Forward Voltage Drop • Halogen Free Available Upon Request By Adding Suffix "-HF" • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Lead Free Finish/RoHS Compliant(Note 1) ("P" S |
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GOOD-ARK |
Schottky Barrier Rectifier ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Low forward voltage, high efficiency ● Guarding for over voltage protection MBRB2045CT Schottky Barrier Rectifier Re |
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International Rectifier |
SCHOTTKY RECTIFIER This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplie |
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CITC |
20A Surface Mount High Power Schottky Barrier Rectifiers • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(ΜΒRΒ2040CT~ΜΒRΒ2065CT). standard >10ΚV(ΜΒRΒ20100CT~ΜΒRΒ20200CT). • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • |
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Silicon Standard |
20A Dual Schottky Rectifiers Plastic packages have Underwriters Laboratory Flammability Classification 94V-0 Dual rectifier construction, positive center tap Metal-silicon junction, majority carrier conduction Low power loss, high efficiency Guardring for overvoltage protectio |
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General Semiconductor |
SCHOTTKY RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low |
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SANGDEST MICROELECTRONICS |
SCHOTTKY RECTIFIER • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness |
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Thinki Semiconductor |
20.0 Ampere Surface Mount Schottky Barrier Rectifiers For surface mounted application Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High sur |
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ON Semiconductor |
SWITCHMODE Power Rectifiers Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After Board Mounting • Guardring for Stress Protection • Low Forward Voltage Drop • 150°C Operating Junction Temperature • Wettable Flacks Option A |
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SMC |
SCHOTTKY RECTIFIER • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness |
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Vishay |
Dual Common Cathode Schottky Rectifier • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation Available • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (f |
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KODENSHI KOREA |
LOW VOLTAGE SCHOTTKY RECTIFIER Low forward voltage drop and leakage current Low power loss and High efficiency Guard-ring for overvoltage protection Dual common cathode rectifier Full lead (Pb)-free and RoHS compliant device 123 12 3 Pin 1, 3 : Anode Pin 2 : Cathode |
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JCET |
Schottky Barrier RECTIFIER Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop TO-263-2L 1. ANODE 2. CATHODE 3. ANODE MAXIMUM RATINGS ( |
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CITC |
20A High Power Schottky Barrier Rectifiers • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix " |
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Siemens Semiconductor |
Memory Time Switch CMOS systems q Time/space switch for 2048-, 4096- or 8192-kbit/s PCM q Switching of up to 512 incoming PCM channels to up to 256 outgoing PCM channels q 16-input and 8-output PCM lines q Different kinds of modes (2048, 4096, 8192 kbit/s or mixed q q q q |
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Formosa MS |
Schottky Barrier Rectifier ......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................. |
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ON Semiconductor |
SWITCHMODE Power Rectifiers Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After Board Mounting • Guardring for Stress Protection • Low Forward Voltage Drop • 150°C Operating Junction Temperature • Wettable Flacks Option A |
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ON Semiconductor |
SWITCHMODE Power Rectifiers Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After Board Mounting • Guardring for Stress Protection • Low Forward Voltage Drop • 150°C Operating Junction Temperature • Wettable Flacks Option A |
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