| No. | Partie # | Fabricant | Description | Fiche Technique |
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AVAGO |
High Linearity 1450 - 2750 MHz Variable Gain Amplifier x High Linearity at low bias current x High max gain: 23.8 dB typ x High linearity performance: +16.5 dBm at -65 dBc ACLR using dual-carrier W-CDMA input signal x Fully-matched 50 Ohm input and simple output match x Low Noise Figure x Built-in attenu |
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AVAGO |
Dual-Band (2.4-2.5) GHz & (4.9-6) GHz WLAN Low-Noise Amplifier • Advanced GaAs E-pHEMT • Low Noise: 0.8dB Typ for 2.4 - 2.5 GHz • Low Noise: 1.4dB Typ for 4.9 - 6 GHz • Wide Supply Voltage: 2 to 3.6V • 50 Ohm matched Input & Output • High Input P1dB and IIP3 • Power Shutdown Function • RoHS Compliant • |
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AVAGO |
High Linearity Balanced Amplifier Module |
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AVAGO |
1.8-2.2GHz Very Low Noise High Gain Balanced Amplifier Module |
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AVAGO |
High Power SPDT Switch Very Low Noise Figure High Power Switch design 50 dB isolation between LNA1_Out and LNA2_In Small package size 8.0 x 8.0 x 1.2 mm3 GaAs E-pHEMT Technology [1] Low Distortion Silicon PIN Diode Technology MSL 2a and Lead-free Spec |
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Avago |
870 MHz - 915 MHz Low Noise High Linearity Amplifier Very Low Noise Figure Low Bypass IL Good Return Loss Fail-safe Bypass mode High linearity performance High isolation @LNA mode Flat gain GaAs E-pHEMT Technology Single 5 V power supply Compact MCOB package 7.0 x 10.0 x 1 |
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AVAGO |
High Linearity Balanced Amplifier Module |
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AVAGO |
TD-SCDMA 10 Watt High Power SPDT Switch |
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Avago |
GPS LNA-Filter Front-End Very Low Noise Figure: 0.95 dB typ. High Gain: 18.2 dB typ. High IIP3 and IP1dB Exceptional Cell/PCS-Band rejection Advanced GaAs E-pHEMT & FBAR Technology Low external component count Shutdown current: < 5 uA CMOS compatible shutdown |
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AVAGO |
Amplifier • Very Low Noise Figure • Good Return Loss • Low Bypass IL • Fail-safe Bypass mode • High linearity performance • High isolation @LNA mode • Flat gain • GaAs E-pHEMT Technology • Single 5 V power supply • Compact MCOB package 7.0 x 10.0 x 1 |
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AVAGO |
Amplifier • Advanced GaAs E-pHEMT • Low Noise: 0.8 dB typ • High Gain : 14.3 dB typ • Low component count • High IIP3 and IP1dB • Wide Supply Voltage: 1V to 3.6V • Shutdown current : < 0.1uA • CMOS compatible shutdown pin (VSD) current @ 2.85V : 90uA • Adjusta |
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AVAGO |
Amplifier • Very Low Noise Figure • Low Bypass IL • Good Return Loss • Fail-safe Bypass mode • High linearity performance • High isolation @LNA mode • Flat gain • GaAs E-pHEMT Technology • Single 5 V power supply • Compact MCOB package 7.0 x 10.0 x 1 |
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AVAGO |
Amplifier • Very Low Noise Figure • Low Bypass IL • Good Return Loss • Fail-safe Bypass mode • High linearity performance • High isolation @LNA mode • Flat gain • GaAs E-pHEMT Technology • Single 5 V power supply • Compact MCOB package 7.0 x 10.0 x 1 |
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AVAGO |
High Power SPDT Switch Very Low Noise Figure High Power Switch design 50 dB isolation between LNA1_Out and LNA2_In Small package size 8.0 x 8.0 x 1.2 mm3 GaAs E-pHEMT Technology [1] Low Distortion Silicon PIN Diode Technology MSL 2a and Lead-free Spec |
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AVAGO |
0.25W Analog Variable Gain Amplifier wide gain control range, low current, excellent input and output return loss. The ALM-80110 is housed in a miniature 5.0X5.0X1.1 mm3, 10-lead multiple-chips-on-board (MCOB) module package. This part is suitable for the AGC/Temperature compensation ci |
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AVAGO |
0.25W Analog Variable Gain Amplifier wide gain control range, low current, excellent input and output return loss. The ALM-80210 is housed in a miniature 5.0X5.0X1.1 mm3, 10-lead multiple-chips-on-board (MCOB) module package. This part is suitable for the AGC/Temperature compensation ci |
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AVAGO |
3.3GHz - 3.9GHz 2 Watt High Linearity Amplifier • Fully matched, input and output • High linearity and P1dB • Unconditionally stable across load condition • Built-in adjustable temperature compensated internal bias circuitry • GaAs E-pHEMT Technology[1] • 5V supply • Excellent uniformity in |
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AVAGO |
SDARS LNA Module • Very Low Noise Figure: 0.83 dB typ. • Exceptional Cell/DCS/PCS/WLAN-Band rejection • Advanced GaAs E-pHEMT & FBAR Technology • 0.95mm typical thickness • Small package dimension: ( 5.0 x 5.0 x 0.95 ) mm3 • Meets MSL3, Lead-free and halogen fr |
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AVAGO |
Low Current Low Noise Amplifier • Operating temperature range -40 to +85 °C • Very Low Noise Figure : 0.97 dB typical • High Gain : 17.9 dB typical • High IIP3 and IP1dB • Advanced GaAs E-pHEMT • Low external component count • Shutdown current : < 5 µA • CMOS compatible shu |
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AVAGO |
GPS Filter-LNA-Filter Front-End Module • Operating temperature range -40 to +85 °C • Very Low Noise Figure: 1.26 dB typ. • Exceptional Cell/DCS/PCS/WLAN-Band rejection • Advanced GaAs E-pHEMT & FBAR Technology • Low external component count. • CMOS compatible shutdown pin (SD) • ES |
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