| No. | Partie # | Fabricant | Description | Fiche Technique |
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Austin Semiconductor |
64K x 1 SRAM SRAM MEMORY ARRAY • Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns • Battery Backup: 2V data retention • High-performance, low-power CMOS double-metal process • Single +5V (+10%) Power Supply • Easy memory expansion with CE\ • All inputs and outputs are TTL compatible w |
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Austin Semiconductor |
MT5C6408 MT5C6408 PIN ASSIGNMENT (Top View) A6 A7 A12 NC Vcc WE\ CE2\ 4 3 2 1 28 27 26 A5 A4 A3 A2 A1 A0 DQ0 5 6 7 8 9 10 11 25 24 23 22 21 20 19 A8 A9 A11 OE\ A10 CE1\ DQ7 28-Pin DIP (C) (300 MIL) NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 Vss 1 2 3 4 5 6 |
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Austin Semiconductor |
32K x 8 SRAM • • • • • • • Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns Battery Backup: 2V data retention Low power standby High-performance, low-power CMOS double-metal process Single +5V (+10%) Power Supply Easy memory expansion with CE\ All inputs and |
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Austin Semiconductor |
128K x 8 SRAM WITH DUAL CHIP ENABLE ULTRA LOW POWER • • • • • • • • www.DataSheet4U.com A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND High Speed: 30 ns Low active power: 715 mW worst case Low CMOS standby power: 3.3 mW worst case 2.0V data retention, Ultra Low 0.3mW worst case power dissipation Battery |
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Austin Semiconductor |
SRAM MEMORY ARRAY • • • • High Speed: 35, 45, 55, and 70 Battery Backup: 2V data retention Low power standby High-performance, low-power, CMOS double-metal process • Single +5V (+10%) Power Supply • Easy memory expansion with CE\ • All inputs and outputs are TTL compa |
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Austin Semiconductor |
32K x 8 SRAM |
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