| No. | Partie # | Fabricant | Description | Fiche Technique |
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Austin Semiconductor |
x8 and x16 Q-FLASH Memory • • • • • • • • • • • • • • • • • 100% Pin and Function compatible to Intel’s MLC Family NOR Cell Architecture 2.7V to 3.6V VCC 2.7V to 3.6V or 5V VPEN (Programming Voltage) Asynchronous Page Mode Reads Manufacturer’s ID Code: 9 Numonyx 0x89h Industr |
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Austin Semiconductor |
1 MEG UVEPROM UV Erasable Programmable Read-Only Memory • Organized 131,072 x 8 • Single +5V ±10% power supply • Operationally compatible with existing megabit EPROMs • Industry standard 32-pin ceramic dual-in-line package • All inputs/outputs fully TTL compatible • 8-bit output for use in microprocessor- |
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Austin Semiconductor |
256K UVEPROM UV Erasable Programmable Read-Only Memory • • • • • • • • Organized 32,768 x 8 Single +5V ±10% power supply Pin-compatible with existing 256K ROM’s and EPROM’s All inputs/outputs fully TTL compatible Power-saving CMOS technology Very high-speed FLASHRITE Pulse Programming 3-state output buff |
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Austin Semiconductor |
Plastic Encapsulated Microcircuit 128Mb 100% Pin and Function compatible to Intel’s MLC Family NOR Cell Architecture 2.7V to 3.6V VCC 2.7V to 3.6V or 5V VPEN (Programming Voltage) Asynchronous Page Mode Reads Manufacturer’s ID Code: ! MT28F128J3MRG Micron 0x2Ch • Industry Standard Pin-Out |
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Austin Semiconductor |
512K x 8 FLASH • Single 5.0V ±10% power supply operation • Fastest access times: 55, 60, 70, 90, 120, & 150ns • Low power consumption: 3 20 mA typical active read current 3 30 mA typical program/erase current 3 1 µA typical standby current (standard access time to |
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Austin Semiconductor |
128K x 8 EEPROM EEPROM Memory Access speed: 120, 150, 200, and 250ns Data Retention: 100 Years z Low power, active current: 50mA, standby current: 500uA z Single +5V (+10%) power supply z Data Polling and Toggle z Erase/Write Endurance (10,000 byte mode / 100,000 page mode) z Sof |
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Austin Semiconductor |
16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory — A hardware method of locking a sector to prevent any program or erase operations within that sector — Sectors can be locked in-system or via programming equipment — Temporary Sector Unprotect feature allows code changes in previously locked sectors |
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Austin Semiconductor |
Dual Voltage Comparator • Wide operating supply range: ±15V to a single +5V • Low input current: 6 nA • High sensitivity: 10µV • Wide differential input range: ±30V • High output drive: 50mA, 50V OPTIONS • Packages 16 pin Ceramic DIP 16 pin Flatpack MARKINGS C016 F016 • |
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Austin Semiconductor |
LOW-DROPOUT VOLTAGE REGULATOR High output voltage accuracy Guaranteed 750mA output ! Low quiescent current ! Low dropout voltage ! Extremely tight load and line regulation ! Very low temperature coefficient ! Current and thermal limiting ! Input can withstand -20V reverse battery |
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Austin Semiconductor |
16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory CFI (Common Flash Interface) Compliant • Sector Group Protection Features Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices • A hardware method of locking a sector to pre |
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Austin Semiconductor |
128K x 8 FLASH • Single 5.0V ±10% power supply operation • Low power consumption: 3 12 mA typical active read current 3 30 mA typical program/erase current 3 <1 µA typical standby current • Flexible sector architecture 3 Eight 16Kbyte sectors 3 Any combination of s |
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